High quality Ge surface passivation layer formed by thermal oxidation of Y/Ge structure

- The YGeOx enjoys a low interface trap density of 2.1 × 1011 cm−2 eV−1.
- Low leakage current of 3.1 × 10−10 A/cm2 at the effective electric field of 1 MV/cm.
- 13 mV flatband voltage shift for BTI test under 10 MV/cm for 8000 s at 85 °C.