کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
5359028 | 1503675 | 2014 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Effects of ozone post deposition treatment on interfacial and electrical characteristics of atomic-layer-deposited Al2O3 and HfO2 films on GaSb substrates
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
شیمی
شیمی تئوریک و عملی
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چکیده انگلیسی
Atomic-layer-deposited Al2O3 and HfO2 films on GaSb substrates were treated by in-situ ozone post deposition treatment (PDT). The effects of ozone PDT on the interfacial and electrical properties of Al2O3 and HfO2 gate dielectric films on GaSb substrates were investigated carefully. It is found that the dielectric quality and the interfacial properties of the Al2O3 and HfO2 films are improved by ozone PDT. After in-situ ozone PDT for 5Â min, the Al2O3 and HfO2 films on GaSb substrates exhibit improved electrical and interfacial properties, such as reduced frequency dispersion, gate leakage current, border traps and interface traps. Interface trap density is reduced by â¼24% for the Al2O3/GaSb stacks and â¼27% for the HfO2/GaSb stacks. In-situ ozone PDT is proved to be a promising technique in improving the quality of high-k gate stacks on GaSb substrates.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Applied Surface Science - Volume 289, 15 January 2014, Pages 601-605
Journal: Applied Surface Science - Volume 289, 15 January 2014, Pages 601-605
نویسندگان
Lianfeng Zhao, Zhen Tan, Jing Wang, Jun Xu,