Keywords: دی الکتریک بالا K; AlPOx; aluminum phosphate; AlOx:Na; sodium-doped aluminum oxide; ZircSOx; zirconium sulfate; HafSOx; hafnium sulfate; AlOx; aluminum oxide; ZrOx; zirconium oxide; HfOx; hafnium oxide; YOx; yttrium oxide; GdOx; gadolinium oxide; Zr/Al/ZrOx; zirconium-alumi
مقالات ISI دی الکتریک بالا K (ترجمه نشده)
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Keywords: دی الکتریک بالا K; Germanium oxidation; Reactive ion etcher; High-k dielectrics; MOS devices;
Keywords: دی الکتریک بالا K; Very high frequency plasma source; Plasma-enhanced atomic layer deposition; Interlayer-free deposition; High-k dielectrics; Damage-free deposition;
Keywords: دی الکتریک بالا K; High-k dielectrics; III-V semiconductors; Gadolinium oxide; High pressure sputtering; MIS device characterization;
Low interface trap density in scaled bilayer gate oxides on 2D materials via nanofog low temperature atomic layer deposition
Keywords: دی الکتریک بالا K; Graphene; Molybdenum disulfide (MoS2); High-k dielectrics; Density of interface states; Electrical characterization; Capacitance-voltage (CâV);
Modifications of structural, chemical, and electrical characteristics of Er2O3/Si interface under Co-60 gamma irradiation
Keywords: دی الکتریک بالا K; High-k dielectrics; Radiation interaction with high-k; Er2O3 thin film; XPS; Radiation influence;
Improved device characteristics obtained in 4H-SiC MOSFET using high-k dielectric stack with ultrathin SiO2-AlN as interfacial layers
Keywords: دی الکتریک بالا K; High-k dielectrics; Specific on resistance; Mobility; SiC MOSFET; Sentaurus TCAD;
Bias temperature instability in scaled CMOS technologies: A circuit perspective
Keywords: دی الکتریک بالا K; High-k dielectrics; Metal gate; BTI; RTN; SRAM; Ring-oscillators; CMOS;
Sol-gel processed high-k aluminum oxide dielectric films for fully solution-processed low-voltage thin-film transistors
Keywords: دی الکتریک بالا K; High-k dielectrics; Metal oxides; Sol-gel; Thin-film transistor; Low-voltage; Solution deposition;
Interface chemistry and surface morphology evolution study for InAs/Al2O3 stacks upon in situ ultrahigh vacuum annealing
Keywords: دی الکتریک بالا K; Elemental diffusion; Surface morphology; High-k dielectrics; InAs; Thermal stability;
Capacitance-voltage characteristics measured through pulse technique on high-k dielectric MOS devices
Keywords: دی الکتریک بالا K; Capacitance-voltage characteristics; High-k dielectrics; Pulse technique;
Assessment of sense measurement duration on BTI degradation in MG/HK CMOS technologies using a novel stacked transistor test structure
Keywords: دی الکتریک بالا K; Bias Temperature Instability; Metal gate; High-k dielectrics; CMOS devices;
Fast and accurate method of lifetime estimation for HfSiON/SiO2 dielectric n-MOSFETs under positive bias temperature instability
Keywords: دی الکتریک بالا K; High-k dielectrics; Positive bias temperature instability (PBTI); Voltage ramp stress (VRS);
Room-temperature UV-ozone assisted solution process for zirconium oxide films with high dielectric properties
Keywords: دی الکتریک بالا K; High-k dielectrics; Metal oxides; Sol-gel; Thin-film transistor; Low-temperature; Photochemical deposition;
Effects of thermal annealing on the interface between tungsten and CeO2/La2O3 stack gate dielectrics
Keywords: دی الکتریک بالا K; Thermal annealing; X-ray photoelectron spectroscopy (XPS); Interface reaction; High-k dielectrics; CMOS technology;
SHI induced effects on the electrical and optical properties of HfO2 thin films deposited by RF sputtering
Keywords: دی الکتریک بالا K; High-k dielectrics; MOS devices; I-V measurements; Photoluminescence; SHI irradiation;
XPS study on the effects of thermal annealing on CeO2/La2O3 stacked gate dielectrics
Keywords: دی الکتریک بالا K; Thermal annealing; X-ray photoelectron spectroscopy (XPS); Interface reaction; High-k dielectrics
Influence of gate oxides with high thermal conductivity on the failure distribution of InGaAs-based MOS stacks
Keywords: دی الکتریک بالا K; Oxide breakdown; Progressive breakdown; High-k dielectrics; III–V MOS devices
Device to circuit reliability correlations for metal gate/high-k transistors in scaled CMOS technologies
Keywords: دی الکتریک بالا K; High-k dielectrics; Metal gate; BTI; TDDB; RTN; SRAM; Ring-oscillators; CMOS;
Structural and electrical characteristics of ALD-HfO2/n-Si gate stack with SiON interfacial layer for advanced CMOS technology
Keywords: دی الکتریک بالا K; High-k dielectrics; Interfacial layer (IL); FTIR; Dit and ideality factor;
A comparative study of charge trapping in HfO2/Al2O3 and ZrO2/Al2O3 based multilayered metal/high-k/oxide/Si structures
Keywords: دی الکتریک بالا K; High-k dielectrics; Al-doped HfO2; Al-doped ZrO2; Trapping; Charge-trapping memory; Conduction mechanisms
Characteristics of metal-gate metal-insulator-semiconductor capacitor with ZrN capping layer fabricated by high-power impulse magnetron sputtering
Keywords: دی الکتریک بالا K; High-k dielectrics; ZrN; ZrO2; High-power impulse magnetron sputtering; HIPIMS; Magnetron sputtering; Metal-gate; MIS capacitor;
Optical, structural and electrical characterizations of stacked Hf-based and silicon nitride dielectrics
Keywords: دی الکتریک بالا K; High-k dielectrics; RF magnetron sputtering; Plasma-enhanced chemical vapor deposition; Memory effect;
Low Dit HfO2/Al2O3/In0.53Ga0.47As gate stack achieved with plasma-enhanced atomic layer deposition
Keywords: دی الکتریک بالا K; Atomic layer deposition; In0.53Ga0.47As; High-k dielectrics; Interface traps; Plasma; Passivation;
Electrical characterization of top-gated molybdenum disulfide metal-oxide-semiconductor capacitors with high-k dielectrics
Keywords: دی الکتریک بالا K; Transition metal dichalcogenide (TMD); Molybdenum disulfide (MoS2); Top-gated MOS capacitor; High-k dielectrics; C-V; I-V;
Fabrication and MOS interface properties of ALD AlYO3/GeOx/Ge gate stacks with plasma post oxidation
Keywords: دی الکتریک بالا K; Germanium; High-k dielectrics; Hysteresis; Slow trap density; Plasma post oxidation; MOS interface;
Characterization of high-k dielectrics using MeV elastic scattering of He ions
Keywords: دی الکتریک بالا K; RBS; Channeling; EBS; Thin films; High-k dielectrics
Analytical modeling and simulation of multigate FinFET devices and the impact of high-k dielectrics on short channel effects (SCEs)
Keywords: دی الکتریک بالا K; Drain induced barrier lowering (DIBL); High-k dielectrics; Short channel effects (SCEs); Silicon-on-insulator (SOI); Subthreshold swing (SS)
Ion beam studies of Hafnium based alternate high-k dielectric films deposited on silicon
Keywords: دی الکتریک بالا K; High-k dielectrics; MOS devices; SHI; HRBS; XRR;
Scaling of HfO2 dielectric on CVD graphene
Keywords: دی الکتریک بالا K; Graphene; X-ray photoelectron spectroscopy; Atomic layer deposition; High-k dielectrics; Chemical vapor deposition; Thin films;
Voltage dependent degradation of HfSiON/SiO2 nMOSFETs under positive bias temperature instability
Keywords: دی الکتریک بالا K; High-k dielectrics; Positive bias temperature instability (PBTI); Electron trap; FN stress; Shallow traps
Effects of ozone post deposition treatment on interfacial and electrical characteristics of atomic-layer-deposited Al2O3 and HfO2 films on GaSb substrates
Keywords: دی الکتریک بالا K; GaSb substrate; High-k dielectrics; Ozone; Interface trap density;
Impact of Gd2O3 passivation layer on interfacial and electrical properties of atomic-layer-deposited ZrO2 gate dielectric on GaAs
Keywords: دی الکتریک بالا K; GaAs; ZrO2; Gd2O3; High-k dielectrics; Atomic-layer-deposited; Band alignments;
Atomic layer deposition of high-quality Al2O3 and Al-doped TiO2 thin films from hydrogen-free precursors
Keywords: دی الکتریک بالا K; Aluminium oxide; Titanium oxide; Thin films; Atomic layer deposition; High-k dielectrics
Filling performance and electrical characteristics of Al2O3 films deposited by atomic layer deposition for through-silicon via applications
Keywords: دی الکتریک بالا K; Aluminum oxide; Atomic layer deposition; Through-silicon via; Step coverage; Breakdown field; High-k dielectrics;
Modeling the voltage nonlinearity of high-k MIM capacitors
Keywords: دی الکتریک بالا K; Voltage nonlinearity; High-k dielectrics; MIM capacitor; Ionic polarization; Induced dipoles
Interface phonon modes of dual-gate MOSFET system
Keywords: دی الکتریک بالا K; High-k dielectrics; Dual-gate MOSFET; Interface phonon modes
First principles study of structural and electronic properties of cubic phase of ZrO2 and HfO2
Keywords: دی الکتریک بالا K; High-k dielectrics; First principles calculations; Electronic structure; ZrO2, HfO2; Surfaces;
Epitaxial thin films of BaSrO as gate dielectric
Keywords: دی الکتریک بالا K; High-k dielectrics; Crystalline oxide; Interface trap density; Band offset; Thermal stability;
Resistive switching effect on Al2O3/InGaAs stacks
Keywords: دی الکتریک بالا K; High-k dielectrics; Resistive switching; Oxide breakdown;
Defects at Ge/oxide and III-V/oxide interfaces
Keywords: دی الکتریک بالا K; High-k dielectrics; First-principles calculations; Defects; Dangling bond; Fixed charge; Carrier trap;
Ge diffusion and bonding state change in metal/high-k/Ge gate stacks and its impact on electrical properties
Keywords: دی الکتریک بالا K; Germanium; High-k dielectrics; Hafnium oxide (HfO2); MOS device; Synchrotron radiation photoemission spectroscopy;
Structural and dielectric properties of Ti and Er co-doped HfO2 gate dielectrics grown by RF sputtering
Keywords: دی الکتریک بالا K; High-k dielectrics; Thin films; HfTiErOx; Substrate temperature; Sputtering;
Metal-organic chemical vapor deposition of high-k dielectric Ce-Al-O layers from various metal-organic precursors for metal-insulator-metal capacitor applications
Keywords: دی الکتریک بالا K; High-k dielectrics; Cerium aluminate; Thin films; Metal-organic chemical vapor deposition; Annealing; Crystallization; Metal-insulator-metal applications;
Ionizing radiation tolerance of stacked Si3N4-SiO2 gate insulators for power MOSFETs
Keywords: دی الکتریک بالا K; Ionizing dose; Radiation hardening; Gate oxides; High-k dielectrics; Nitride; Interface trap; Hydrogen passivation; Heiman model; Power MOSFET;
Micro light emitting device prepared from sputter deposited thin hafnium oxide film
Keywords: دی الکتریک بالا K; Light emitting devices; High-k dielectrics; Dielectric breakdown
Properties of LaAlO3 thin film on GaAs(1 0 0) treated by in situ NH3 plasma
Keywords: دی الکتریک بالا K; Plasma enhanced atomic layer deposition; High-k dielectrics; III–V semiconductors; X-ray photoelectron spectra; Transmission electron microscopy; MIS capacitors
Characteristics of ZnO thin film transistor using Ta2O5 gate dielectrics
Keywords: دی الکتریک بالا K; ZnO-TFT; Bottom gate; On/off current ratio; High-k dielectrics
The effect of oxygen source on atomic layer deposited Al2O3 as blocking oxide in metal/aluminum oxide/nitride/oxide/silicon memory capacitors
Keywords: دی الکتریک بالا K; Charge trapping memories; High-k dielectrics; Aluminum oxide; MANOS; ALD; Oxygen source
2 MeV electron irradiation effects on bulk and interface of atomic layer deposited high-k gate dielectrics on silicon
Keywords: دی الکتریک بالا K; High-k dielectrics; Electrical characterization; Irradiation; Hafnium oxide; Aluminum oxide; Atomic layer deposition