Low Dit HfO2/Al2O3/In0.53Ga0.47As gate stack achieved with plasma-enhanced atomic layer deposition

Low Dit HfO2/Al2O3/In0.53Ga0.47As gate stack achieved with plasma-enhanced atomic layer deposition

Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Microelectronic Engineering - Volume 147, 1 November 2015, Pages 231-234

Vladimir Djara, Marilyne Sousa, Nikola Dordevic, Lukas Czornomaz, Veeresh Deshpande, Chiara Marchiori, Emanuele Uccelli, Daniele Caimi, Christophe Rossel, Jean Fompeyrine,