Keywords: تله رابط; Metal-insulator-semiconductor capacitor; MIS capacitor; Metal-organic frameworks; MOFs; Cu3(BTC)2; Interface traps;
مقالات ISI تله رابط (ترجمه نشده)
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Keywords: تله رابط; Bipolar junction transistor; Electron; Heavy ion; Interface traps; Minority lifetime; Radiation damage;
Keywords: تله رابط; Silicon sensors; Radiation damage; TCAD simulations; Oxide charges; Border traps; Interface traps;
Keywords: تله رابط; Minority carrier effective lifetime; Plasma irradiation; Laser irradiation; Interface traps; Hysteresis; Microwave absorption; Carrier recombination;
Fast and slow traps in Al2O3/(GaN)/AlGaN/GaN heterostructures studied by conductance technique
Keywords: تله رابط; Equivalent parallel conductance; Metal-insulator-semiconductor structures; III-N MIS heterostructure; Interface traps;
Implications of electron beam irradiation on Al/n-Si Schottky junction properties
Keywords: تله رابط; Electron beam irradiation; Schottky barrier height; Interface traps; XPS; Effective work function; Synchrotron;
NBTI and irradiation related degradation mechanisms in power VDMOS transistors
Keywords: تله رابط; NBT stress; Irradiation; Power VDMOS; Oxide trapped charge; Interface traps;
Gamma irradiation effects on Al/n-Si Schottky junction properties
Keywords: تله رابط; Gamma irradiation; Schottky barrier height; Interface traps; XPS; Effective work function;
Advanced processing for mobility improvement in 4H-SiC MOSFETs: A review
Keywords: تله رابط; Silicon carbide; SiC MOSFETs; Field effect mobility; Interface traps; Power devices;
Border traps and bias-temperature instabilities in MOS devices
Keywords: تله رابط; Border traps; Interface traps; Oxide traps; Bias-temperature instability; Defects; MOS; Radiation effects; 1/f noise; SiGe; InGaAs; Compound semiconductor; Graphene; Nanotube; Carbon; Black phosphorus;
Interface traps contribution to capacitance of Al2O3/(GaN)AlGaN/GaN heterostructures at low frequencies
Keywords: تله رابط; Capacitance-voltage measurement; Metal-insulator-semiconductor structures; III-N MIS heterostructure; Interface traps; Capacitance simulation;
Efficient methodology to extract interface traps parameters for TCAD simulations
Keywords: تله رابط; Bias temperature instability (BTI); Interface traps; Random telegraph noise (RTN); Technology computer aided design (TCAD); Variability;
Study on the electrical degradation of AlGaN/GaN MIS-HEMTs induced by residual stress of SiNx passivation
Keywords: تله رابط; AlGaN/GaN metal-insulation-semiconductor high electron mobility transistors (MIS-HEMTs); Frequency dependent capacitance-voltage measurement; Residual stress; Interface traps;
The effect of oxide layer thickness on the quantification of 1.5 MeV γ-radiation induced interface traps in the Ag/SiO2/Si MOS devices
Keywords: تله رابط; MOS structure; Interface traps; Gamma radiation; Relaxation time;
Analytical models for the 2DEG concentration and gate leakage current in AlGaN/GaN HEMTs
Keywords: تله رابط; 2DEG; AlGaN/GaN HEMT; DoS (Density of States); Gate leakage current; Interface traps; Thermionic emission; Trap-Assisted Tunneling (TAT);
Reliability characterization of SiON and MGHK MOSFETs using flicker noise and its correlation with the bias temperature instability
Keywords: تله رابط; Low-frequency noise; High-K gate dielectrics; Poly-Si/SiON dielectrics; Bias temperature instability; Interface traps;
Effect of scaling on noise in Circular Gate TFET and its application as a digital inverter
Keywords: تله رابط; Circular Gate Tunnel FET; Flicker noise; Generation-recombination noise; Diffusion noise; Interface traps; Digital inverter;
Low Dit HfO2/Al2O3/In0.53Ga0.47As gate stack achieved with plasma-enhanced atomic layer deposition
Keywords: تله رابط; Atomic layer deposition; In0.53Ga0.47As; High-k dielectrics; Interface traps; Plasma; Passivation;
Physically-based extraction methodology for accurate MOSFET degradation assessment
Keywords: تله رابط; Parameter extractions; HCI; Degradation; Traps; Interface traps;
The impact of stress-induced defects on MOS electrostatics and short-channel effects
Keywords: تله رابط; Interface traps; Oxide-trapped charge; Short-channel effects; MOS electrostatics; Scaling length; Reliability
Simulation of flicker noise in gate-all-around Silicon Nanowire MOSFETs including interface traps
Keywords: تله رابط; Silicon Nanowire MOSFET; GAA (gate-all-around); Flicker noise; Interface traps;
A defect-based compact modeling approach for the reliability of CMOS devices and integrated circuits
Keywords: تله رابط; CMOS; Reliability; NBTI; Interface traps; Oxide-trapped charge; Surface potential
Impact of plasma post oxidation temperature on interface trap density and roughness at GeOx/Ge interfaces
Keywords: تله رابط; Germanium; Germanium oxide; Interface traps; Interface roughness;
Investigation of electron mobility in surface-channel Al2O3/In0.53Ga0.47As MOSFETs
Keywords: تله رابط; InGaAs; Mobility; MOSFET; High-k; Interface traps; Pulsed Id − Vg
Effects of traps and polarization charges on device performance of AlGaN/GaN high electron mobility transistors
Keywords: تله رابط; AlGaN/GaN materials; High electron mobility transistors (HEMTs); ISE TCAD; Interface traps
Investigation of gate edge effect on interface trap density in 3C–SiC MOS capacitors
Keywords: تله رابط; Silicon carbide; Interface traps; Metal-oxide-semiconductor structures; Mechanical stress; Edge effect
A switching system based on microcontroller for successive applying of MGT and CPT on MOSFETs
Keywords: تله رابط; Midgap-subthreshold technique; Charge-pumping technique; Gate oxide charge; Interface traps; MOSFETs; Microcontroller
Bipolar charge transport in organic field-effect transistors: Enabling high mobilities and transport of photo-generated charge carriers by a molecular passivation layer
Keywords: تله رابط; Molecular semiconductors; Unipolar and bipolar transport; Interface traps; Electrode modification; Light emission; Light absorption
On the dynamic NBTI of the HfO2 and HfSiON P–MOSFET
Keywords: تله رابط; Bias-temperature instability; Recovery; Permanent degradation; Hole trapping; Interface traps
Structural and electrical characteristics of RF-sputtered HfO2 high-k based MOS capacitors
Keywords: تله رابط; HfO2; High-k; Sputtering; XRD; AFM; Interface traps
Capacitance–voltage characterization of silicon oxide and silicon nitride coatings as passivation layers for crystalline silicon solar cells and investigation of their stability against x-radiation
Keywords: تله رابط; Capacitance–voltage; Interface traps; Plasma-enhanced chemical vapor deposition; Silicon oxide; Silicon nitride; Solar cells; Passivation; X-ray induced degradation
Deep level transient spectroscopy study for the development of ion-implanted silicon field-effect transistors for spin-dependent transport
Keywords: تله رابط; DLTS; MOSFET; Implantation; Interface traps; Minority carriers; EDMR;
Interfacial properties of AlN and oxidized AlN on Si
Keywords: تله رابط; MIS capacitors; Aluminum nitride; Thermal oxidation; Molecular beam epitaxy; Magnetron sputtering; Interface traps; Conduction mechanism;
Effect of high-energy neutrons on MuGFETs
Keywords: تله رابط; Multiple-Gate FETs; FinFETs; Irradiation; High-energy neutrons; Total-dose effects; Charge build-up; Interface traps; Gate edge/spacer effect;
A study of interface characteristics in HfAlO/p-Si by deep level transient spectroscopy
Keywords: تله رابط; 73.20.At; 73.20.Hb; 73.40.Qv; 73.50.Gr; 81.65.Rv; Silicon; MOS capacitors; Deep level transient spectroscopy; Interface traps; Passivation; Annealing; Hafniun oxide; Aluminum;
Electrical characterization and carrier transportation in Hf-silicate dielectrics using ALD gate stacks for 90 nm node MOSFETs
Keywords: تله رابط; 68.47.Fg; 68.60.Dv; 68.35.Gy; 68.47.Gh; HfSiON; High-κ; Interface traps; Carrier transportation;
Repeating of positive and negative high electric field stress and corresponding thermal post-stress annealing of the n-channel power VDMOSFETs
Keywords: تله رابط; 78.40.Fy; 73.40.Qv; 72.20.Ht; 72.20.JvFowler-Nordheim injection; High electric field stress; Oxide trapped charge; Interface traps; Switching traps; MOS transistors
The effects of radiation-induced interface traps on base current in gated bipolar test structures
Keywords: تله رابط; Bipolar junction transistors; Ionizing radiation; Fermi level; Interface traps; Surface recombination velocity
Bias-stress induced threshold voltage and drain current instability in 4H–SiC DMOSFETs
Keywords: تله رابط; 71.20.NrSiC; DMOSFET; Threshold-voltage shift; Drain current transient; Interface traps; Mobile ions
Physics-based 1/f noise model for MOSFETs with nitrided high-κ gate dielectrics
Keywords: تله رابط; High-κ dielectric; Gate stack; Unified Noise Model; MOSFET; 1/f noise; Interface traps
Determination of bulk and interface density of states in polycrystalline silicon thin film transistors
Keywords: تله رابط; Polysilicon TFTs; Bulk traps; Interface traps
Electrical effects of transient neutron irradiation of silicon devices
Keywords: تله رابط; 61.80.Az; 61.82.MsSilicon; Silicon dioxide; Neutron irradiation; Ionizing radiation; Diodes; Interstitials; Vacancies; Interface traps
Probing individual nanoscale organic light-emitting diodes with atomic force electroluminescence microscopy and bridge-enhanced nanoscale impedance microscopy
Keywords: تله رابط; 81.07.Pr; 72.80.Le; 42.70.JkOLEDs; Conductive atomic force microscopy; Impedance spectroscopy; Sub-micron; Interface traps; Spatial variations
Dose-rate dependence of radiation-induced interface trap density in silicon bipolar transistors
Keywords: تله رابط; 61.80.Az; 61.82.MsSilicon dioxide; Ionizing radiation; Hydrogen; Interface traps; Fixed charge; ELDRS
1/f noise performance of MOSFETs with HfO2 and metal gate on Ge-on-insulator substrates
Keywords: تله رابط; HfO2; Germanium; Low-frequency noise; Metal gate; Number fluctuations; Tunneling coefficient; Interface traps
A field-effect electron mobility model for SiC MOSFETs including high density of traps at the interface
Keywords: تله رابط; 4H-SiC MOSFETs; Mobility model; Field-effect mobility; Interface traps; Coulomb scattering
Temperature dependences of surface recombination DC current-voltage characteristics in MOS structures
Keywords: تله رابط; 85.30.De; 85.30.Tv; 85.40.Ry; Recombination current; Interface traps; Energy distribution; Temperature dependence; Thermal activation energy; Reciprocal slope;
Effect of interface traps on Debye thickness semiconductor films
Keywords: تله رابط; 73.20.âr; 73.40 Qv; 73.50.âh; Interface traps; PbTe; Debye length thickness film; Relaxation; Electric field effect;
Defect behaviors in n-channel power VDMOSFETs during HEFS and thermal post-HEFS annealing
Keywords: تله رابط; 78.40.Fy; 73.40.Qv; 72.20.Ht; 72.20.Jv; Oxide trapped charge; Interface traps; High electric field stress; Fowler-Nordheim injection; Annealing; MOS transistor;
Impact of Al incorporation in hafnia on interface states in (100)Si/HfAlxOy
Keywords: تله رابط; interface traps; high-permittivity oxides; MOS-structures;