Temperature dependences of surface recombination DC current-voltage characteristics in MOS structures

Temperature dependences of recombination current at interface traps in MOS transistor structure are investigated using the Shockley-Read-Hall Recombination DC current-voltage (R-DCIV) characteristics. Results include the effects of energy distribution of the interface traps (discrete, constant and U-shaped energy distributions) on the temperature dependence of the base terminal current-vs-gate-voltage lineshape (IB-VGB), the peak current and voltage (IB-peak, VGB-peak) and their thermal activation energy EA, and the reciprocal slope n of the IB-peak vs base/drain (or base/source) p/n junction forward voltage VBD. Surface impurity concentration and oxide thickness are varied. Temperature dependence of EA, VGB-peak and n is small while IB-peak and R-DCIV linewidth, large. This small temperature dependence simplifies the experimental implementation and data analysis of R-DCIV methodology applied at room temperatures without using expensive temperature controlled wafer-probe station.