Shallow junction characteristics due to low temperature BGe molecular ion implantation into silicon
Keywords: 61.72.Tt; 61.80.Jh; 81.40.Ef; 85.40.Ry; 84.37.tq; 73.40.Kp; Molecular ion implantation; Shallow junction; Annealing; Transient-enhanced diffusion; Junction depth; Sheet resistance;