کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
10672611 1009932 2009 6 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Dopant distributions in n-MOSFET structure observed by atom probe tomography
موضوعات مرتبط
مهندسی و علوم پایه مهندسی مواد فناوری نانو (نانو تکنولوژی)
پیش نمایش صفحه اول مقاله
Dopant distributions in n-MOSFET structure observed by atom probe tomography
چکیده انگلیسی
The dopant distributions in an n-type metal-oxide-semiconductor field effect transistor (MOSFET) structure were analyzed by atom probe tomography. The dopant distributions of As, P, and B atoms in a MOSFET structure (gate, gate oxide, channel, source/drain extension, and halo) were obtained. P atoms were segregated at the interface between the poly-Si gate and the gate oxide, and on the grain boundaries of the poly-Si gate, which had an elongated grain structure along the gate height direction. The concentration of B atoms was enriched near the edge of the source/drain extension where the As atoms were implanted.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Ultramicroscopy - Volume 109, Issue 12, November 2009, Pages 1479-1484
نویسندگان
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