Raman and TEM characterization of high fluence C implanted nanometric Si on insulator

► We synthesized 30-40 nm SiC layers by C implantation at 600 °C and 1250 °C annealing. ► C region Raman spectra (1100-1700 cm−1) reveal CC bounds in the layer. ► Raman in the C region can probe structural quality; SiC bounds showed weak signal. ► Two parameters were defined for the analysis and agreed about the conclusions. ► Direct analysis by TEM demonstrated the reliability of the defined Raman parameters.