کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
5360172 | 1388257 | 2009 | 9 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Processing for optically active erbium in silicon by film co-deposition and ion-beam mixing
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
شیمی
شیمی تئوریک و عملی
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
Techniques of film deposition by co-evaporation, ion-beam assisted mixing, oxygen ion implantation, and thermal annealing were been combined in a novel way to study processing of erbium-in-silicon thin-film materials for optoelectronics applications. Structures with erbium concentrations above atomic solubility in silicon and below that of silicide compounds were prepared by vacuum co-evaporation from two elemental sources to deposit 200-270 nm films on crystalline silicon substrates. Ar+ ions were implanted at 300 keV. Oxygen was incorporated by O+-ion implantation at 130 keV. Samples were annealed at 600 °C in vacuum. Concentration profiles of the constituent elements were obtained by Rutherford backscattering spectrometry. Results show that diffusion induced by ion-beam mixing and activated by thermal annealing depends on the deposited Si-Er profile and reaction with implanted oxygen. Room temperature photoluminescence spectra show Er3+ transitions in a 1480-1550 nm band and integrated intensities that increase with the oxygen-to-erbium ratio.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Applied Surface Science - Volume 255, Issue 8, 1 February 2009, Pages 4503-4511
Journal: Applied Surface Science - Volume 255, Issue 8, 1 February 2009, Pages 4503-4511
نویسندگان
S. Abedrabbo, Q. Mohammed, A.T. Fiory,