Redistribution of dopant, implanted in a multilayer structure for production of a p-n-junction, during annealing radiative defects

We analyze the dynamics of redistribution of dopant, which was implanted in a multilayer structure for production of a p-n-junction, during annealing radiative defects. The analysis has been done analytically by using a development of the method of averaging functional correction. The development gives us the possibility to decrease of number of steps of the iteration procedure. Time and concentrational dependencies of the diffusion coefficient of the dopant have been considered. The main results are: (i) the inhomogeneity of the structure leads to increasing the sharpness of p-n-junction, (ii) the homogeneity of dopant distribution in doped area, (iii) the optimization of the annealing time as a function of the system parameters.