کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1861556 | 1037522 | 2008 | 7 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Redistribution of dopant, implanted in a multilayer structure for production of a p-n-junction, during annealing radiative defects
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موضوعات مرتبط
مهندسی و علوم پایه
فیزیک و نجوم
فیزیک و نجوم (عمومی)
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Redistribution of dopant, implanted in a multilayer structure for production of a p-n-junction, during annealing radiative defects Redistribution of dopant, implanted in a multilayer structure for production of a p-n-junction, during annealing radiative defects](/preview/png/1861556.png)
چکیده انگلیسی
We analyze the dynamics of redistribution of dopant, which was implanted in a multilayer structure for production of a p-n-junction, during annealing radiative defects. The analysis has been done analytically by using a development of the method of averaging functional correction. The development gives us the possibility to decrease of number of steps of the iteration procedure. Time and concentrational dependencies of the diffusion coefficient of the dopant have been considered. The main results are: (i) the inhomogeneity of the structure leads to increasing the sharpness of p-n-junction, (ii) the homogeneity of dopant distribution in doped area, (iii) the optimization of the annealing time as a function of the system parameters.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Physics Letters A - Volume 372, Issue 11, 10 March 2008, Pages 1897-1903
Journal: Physics Letters A - Volume 372, Issue 11, 10 March 2008, Pages 1897-1903
نویسندگان
E.L. Pankratov,