کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
5450021 | 1512856 | 2017 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Interface traps contribution to capacitance of Al2O3/(GaN)AlGaN/GaN heterostructures at low frequencies
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
مواد الکترونیکی، نوری و مغناطیسی
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Interface traps contribution to capacitance of Al2O3/(GaN)AlGaN/GaN heterostructures at low frequencies Interface traps contribution to capacitance of Al2O3/(GaN)AlGaN/GaN heterostructures at low frequencies](/preview/png/5450021.png)
چکیده انگلیسی
Influence of interface traps at Al2O3/(GaN)/AlGaN interface on low and high frequency capacitance of Al2O3/(GaN)/AlGaN/GaN heterostructure capacitor was studied. New features were observed in the capacitance curves. Obtained experimental results were modeled and simulated and accordance with the experiment has been obtained. For lower frequencies a new capacitance peak in the depletion and increase of the capacitance in a plateau region were measured. The capacitance peak in the depletion region was successfully explained by a capacitance response of the interface traps with U-shape density distribution. On the other hand the increase of the capacitance plateau was modeled by the homogeneous interface trap distribution. We assume that the traps located near the band edges having the highest density are able to respond to the low frequency measuring.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Physica E: Low-dimensional Systems and Nanostructures - Volume 93, September 2017, Pages 238-242
Journal: Physica E: Low-dimensional Systems and Nanostructures - Volume 93, September 2017, Pages 238-242
نویسندگان
J. Osvald,