کد مقاله کد نشریه سال انتشار مقاله انگلیسی ترجمه فارسی نسخه تمام متن
77488 49283 2016 8 صفحه PDF سفارش دهید دانلود کنید
عنوان انگلیسی مقاله ISI
Atomic layer deposited zinc oxysulfide n-type buffer layers for Cu2ZnSn(S,Se)4 thin film solar cells
ترجمه فارسی عنوان
لایه‌های بافر نوع n oxysulfide روی با رسوب لایه اتمی برای سلول های خورشیدی فیلم نازک Cu2ZnSn(S,Se)4
کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه مهندسی شیمی کاتالیزور
چکیده انگلیسی


• CdS buffer layer for CZTSSe solar cells was replaced with Zn(O,S).
• Atomic layer deposition technique was used for precise anion control of Zn(O,S).
• O/(O+S) ratio of ~0.67 was the optimized composition.
• Conversion efficiency was further improved by using NH4OH instead of H2O.

The structural, electrical, chemical, and optical properties of ternary Zn(O,S) thin films formed by atomic layer deposition (ALD) were investigated. It was revealed that the film׳s characteristics were highly influenced by the O/(O+S) ratio. The n-type Zn(O,S) layer was applied to both S-rich and Se-rich Cu2ZnSn(S,Se)4 (CZTSSe) absorbers as an alternative buffer layer to conventional CdS. The device performance relationship to the O/(O+S) ratio was examined. The highest power-conversion efficiency (PCE) of 2.75% and 3.30% was achieved using an actual O/(O+S) ratio of ~0.67 in the buffer layer for S-rich and Se-rich CZTSSe solar cells, and these PCEs correspond to 77% and 67% of the standard CdS-based solar cells, respectively. Further improvement in Se-rich CZTSSe was demonstrated by using NH4OH solution instead of pure H2O as oxygen source during ALD process. The dependence of the solar cell performance on the O/(O+S) ratio was investigated using dark current density–voltage (J–V), external quantum efficiency (EQE), transmission electron microscopy (TEM), and energy-dispersive X-ray spectroscopy (EDX).

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ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Solar Energy Materials and Solar Cells - Volume 155, October 2016, Pages 43–50
نویسندگان
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