کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
749039 | 894804 | 2010 | 9 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Effect of high-energy neutrons on MuGFETs
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
سایر رشته های مهندسی
مهندسی برق و الکترونیک
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Effect of high-energy neutrons on MuGFETs Effect of high-energy neutrons on MuGFETs](/preview/png/749039.png)
چکیده انگلیسی
This paper investigates, for the first time, the influence of high-energy neutrons on Multiple-Gate FETs (MuGFETs) with various gate lengths and fin widths. Neutron-induced degradation is addressed through the variation of major device parameters such as threshold voltage, subthreshold slope, maximum transconductance and DIBL. We demonstrate that high-energy neutrons result in total-dose effects largely similar to those caused by γ- and proton-irradiations. It is shown that, contrarily to the generally-believed immunity to irradiation, very short-channel MuGFETs can become extremely sensitive to the total-dose effect. The possible reasons of such length-dependent neutron-induced degradation are discussed and finally related to gate edges.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Solid-State Electronics - Volume 54, Issue 2, February 2010, Pages 196-204
Journal: Solid-State Electronics - Volume 54, Issue 2, February 2010, Pages 196-204
نویسندگان
V. Kilchytska, J. Alvarado, N. Collaert, R. Rooyakers, O. Militaru, G. Berger, D. Flandre,