کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
5361121 | 1388269 | 2008 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
A study of interface characteristics in HfAlO/p-Si by deep level transient spectroscopy
دانلود مقاله + سفارش ترجمه
دانلود مقاله ISI انگلیسی
رایگان برای ایرانیان
کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
شیمی
شیمی تئوریک و عملی
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: A study of interface characteristics in HfAlO/p-Si by deep level transient spectroscopy A study of interface characteristics in HfAlO/p-Si by deep level transient spectroscopy](/preview/png/5361121.png)
چکیده انگلیسی
Deep level transient spectroscopy (DLTS) and high-frequency capacitance-voltage (HF-CV) measurement are used for the investigation of HfAlO/p-Si interface. The so-called “slow” interface states detected by HF-CV are obtained to be 2.68Â ÃÂ 1011Â cmâ2. Combined conventional DLTS with insufficient-filling DLTS (IF-DLTS), the true energy level position of interfacial traps is found to be 0.33Â eV above the valance band maximum of silicon, and the density of such “fast” interfacial traps is 1.91Â ÃÂ 1012Â cmâ2Â eVâ1. The variation of energy level position of such traps with different annealing temperatures indicates the origin of these traps may be the oxide-related traps very close to the HfAlO/Si interface. The interfacial traps' passivation and depassivation effect of postannealing in forming gas are shown by comparing samples annealed at different temperatures.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Applied Surface Science - Volume 254, Issue 22, 15 September 2008, Pages 7512-7515
Journal: Applied Surface Science - Volume 254, Issue 22, 15 September 2008, Pages 7512-7515
نویسندگان
Ning Zhan, Min Xu, David Wei Zhang, Fang Lu,