Keywords: طیف سنجی گذرا سطح عمیق; Admittance spectroscopy; Deep level transient spectroscopy; Spectroscopic resolution; SiC; Detection limit; Deep level defects;
مقالات ISI طیف سنجی گذرا سطح عمیق (ترجمه نشده)
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Keywords: طیف سنجی گذرا سطح عمیق; Temperature and Injection Dependent Lifetime Spectroscopy; Deep Level Transient Spectroscopy; Recombination; Capture cross section; Defects; Silicon;
High resolution observation of defects at SiO2/4H-SiC interfaces using time-resolved scanning nonlinear dielectric microscopy
Keywords: طیف سنجی گذرا سطح عمیق; Interface states; Silicon carbide; Deep level transient spectroscopy;
Capacitance spectroscopy on n-type GaNAs/GaAs embedded quantum structure solar cells
Keywords: طیف سنجی گذرا سطح عمیق; GaNAs/GaAs; Deep level transient spectroscopy; Admittance spectroscopy; Quantum wells;
DLTS study of InGaAs and GaAsN structures with different indium and nitrogen compositions
Keywords: طیف سنجی گذرا سطح عمیق; Semiconductor structure; Composition; Deep energy level; Deep Level Transient Spectroscopy; InGaAs; GaAsN; AP-MOVPE;
Deep levels in the MBE ZnO:As/n-GaN diodes - Photoluminescence, electrical properties and deep level transient spectroscopy
Keywords: طیف سنجی گذرا سطح عمیق; Zinc oxide; Arsenic; P-type; Defects; Deep level transient spectroscopy;
Effect of growth techniques on the structural, optical and electrical properties of indium doped TiO2 thin films
Keywords: طیف سنجی گذرا سطح عمیق; In-doped TiO2; Pulsed laser deposition; Sputtering; XRD; Photoluminescence; Deep level transient spectroscopy;
Analysis of deep level defects in bipolar junction transistors irradiated by 2Â MeV electrons
Keywords: طیف سنجی گذرا سطح عمیق; Electron irradiation; Bipolar junction transistor; Deep level defects; Deep level transient spectroscopy;
Recrystallization effects of swift heavy 209Bi ions irradiation on electrical degradation in 4H-SiC Schottky barrier diode
Keywords: طیف سنجی گذرا سطح عمیق; Silicon carbide Schottky barrier diode; Deep level transient spectroscopy; Recrystallization; Swift heavy ion;
Radiation damage and defects in NPN bipolar junction transistors irradiated by silicon ions with various energies
Keywords: طیف سنجی گذرا سطح عمیق; Bipolar junction transistors; Heavy ions; Radiation defects; Deep level transient spectroscopy;
Stability of Cu(In,Ga)Se2 solar cells: A literature review
Keywords: طیف سنجی گذرا سطح عمیق; a-Si:H; hydrogenated amorphous silicon; AFM; atomic force microscope; ALD; atomic layer deposition; ALT; accelerated lifetime testing; CBD; chemical bath deposition; CIGS; Cu(In,Ga)Se2; CIGSSe; Cu(In,Ga)(Se,S)2; CIS; CuInSe2; CISSe; CuIn(Se,S)2; CTE; coef
Low-temperature fabrication of Y2O3/Ge gate stacks with ultrathin GeOx interlayer and low interface states density characterized by a reliable deep-level transient spectroscopy method
Keywords: طیف سنجی گذرا سطح عمیق; Ge gate stacks; GeOx interlayer; Y2O3; Low-temperature fabrication; Interface states density; Deep level transient spectroscopy;
Influence of deposition conditions on electrical and mechanical properties of Sm2O3-doped CeO2 thin films prepared by EB-PVD (+IBAD) methods. Part 1: Effective relative permittivity
Keywords: طیف سنجی گذرا سطح عمیق; CeO2Â +Â x; Sm2O3 thin films; Relative permittivity; Impedance spectroscopy; Deep level transient spectroscopy; Electron beam-physical vapour deposition; Ionic beam assisted deposition;
Charge carrier traffic at self-assembled Ge quantum dots on Si
Keywords: طیف سنجی گذرا سطح عمیق; Self-assembled Ge/Si quantum dots; Molecular beam epitaxy; Surface morphology; Deep level transient spectroscopy; Electronic transport in quantum dots; Quantum confined energy states
DLTS Studies of bias dependence of defects in silicon NPN bipolar junction transistor irradiated by heavy ions
Keywords: طیف سنجی گذرا سطح عمیق; Bipolar junction transistors; Radiation damage; Deep level transient spectroscopy; Gain degradation
Extended deep level defects in Ge-condensed SiGe-on-Insulator structures fabricated using proton and helium implantations
Keywords: طیف سنجی گذرا سطح عمیق; SiGe-on-Insulator; Deep level transient spectroscopy; Extended defect; Germanium; Condensation; SiGe; Proton implantation
Hydrogen effects on deep level defects in proton implanted Cu(In,Ga)Se2 based thin films
Keywords: طیف سنجی گذرا سطح عمیق; Copper indium gallium sulfide; Deep level transient spectroscopy; Evaporation; Proton implantation; Solar cells
Current transport mechanisms in Ru/Pd/n-GaN Schottky barrier diodes and deep level defect studies
Keywords: طیف سنجی گذرا سطح عمیق; Schottky barrier diodes; I-V and C-V characteristics; Gaussian distribution; Interface state density; Deep level transient spectroscopy;
High deposition rate hydrogenated polymorphous silicon characterized by different capacitance techniques
Keywords: طیف سنجی گذرا سطح عمیق; Polymorphous silicon; High deposition rate; Capacitance; Deep level transient spectroscopy;
Characterization of defects in hydrogenated amorphous silicon deposited on different substrates by capacitance techniques
Keywords: طیف سنجی گذرا سطح عمیق; Amorphous silicon; Defect states; Substrate; Capacitance; Deep level transient spectroscopy; Hydrogenation;
Factors limiting minority carrier lifetime in solar grade silicon produced by the metallurgical route
Keywords: طیف سنجی گذرا سطح عمیق; Solar grade silicon; Minority-carrier lifetime; Deep level transient spectroscopy; X-ray fluorescence; Transmission and scanning electron microscopyHL area, high lifetime area; LL area, low lifetime area
Dislocation-induced electron and hole levels in InAs quantum-dot Schottky diodes
Keywords: طیف سنجی گذرا سطح عمیق; Nanostructures; Quantum dots; Molecular beam epitaxy; Deep level transient spectroscopy;
Comparison between cathodoluminescence spectroscopy and capacitance transient spectroscopy on Al+ ion implanted 4H-SiC p+/n diodes
Keywords: طیف سنجی گذرا سطح عمیق; Silicon carbide; Ion implantation; Cathodoluminescence; Deep level transient spectroscopy
Formation and annealing behavior of prominent point defects in MeV ion implanted n-type epitaxial Si
Keywords: طیف سنجی گذرا سطح عمیق; Silicon; Elemental semiconductors; Deep levels; Ion implantation; Deep level transient spectroscopy; Carrier density
Study on carrier trapping and emission processes in InAs/GaAs self-assembled quantum dots by varying filling pulse width during DLTS measurements
Keywords: طیف سنجی گذرا سطح عمیق; Quantum dot; InAs/GaAs; Filling pulse width; Deep level transient spectroscopy; Capacitance–voltage
A study of interface characteristics in HfAlO/p-Si by deep level transient spectroscopy
Keywords: طیف سنجی گذرا سطح عمیق; 73.20.At; 73.20.Hb; 73.40.Qv; 73.50.Gr; 81.65.Rv; Silicon; MOS capacitors; Deep level transient spectroscopy; Interface traps; Passivation; Annealing; Hafniun oxide; Aluminum;
Characterization of electron irradiated GaN n+–p diode
Keywords: طیف سنجی گذرا سطح عمیق; Electron-beam irradiation; GaN; n+–p diode; Photo detector; Deep level transient spectroscopy
Investigation of deep level defects in copper irradiated bipolar junction transistor
Keywords: طیف سنجی گذرا سطح عمیق; 71.55.−i; 72.20.Jv; 78.70.−g; 61.82.FkBipolar junction transistor; Deep Level Transient Spectroscopy; Deep level defects; Shockley Read Hall recombination; Isochronal annealing
Investigation of acceptor states in ZnO by junction DLTS
Keywords: طیف سنجی گذرا سطح عمیق; ZnO; pn-diode; Deep level transient spectroscopy; Scanning capacitance microscopy; Hole trap; Electron trap