کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
749288 | 894817 | 2008 | 7 صفحه PDF | دانلود رایگان |
![عکس صفحه اول مقاله: Investigation of deep level defects in copper irradiated bipolar junction transistor Investigation of deep level defects in copper irradiated bipolar junction transistor](/preview/png/749288.png)
Commercial bipolar junction transistor (2N 2219A, npn) irradiated with 150 MeV Cu11+-ions with fluence of the order 1012 ions cm−2, is studied for radiation induced gain degradation and deep level defects. I–V measurements are made to study the gain degradation as a function of ion fluence. The properties such as activation energy, trap concentration and capture cross-section of deep levels are studied by deep level transient spectroscopy (DLTS). Minority carrier trap levels with energies ranging from EC − 0.164 eV to EC − 0.695 eV are observed in the base–collector junction of the transistor. Majority carrier trap levels are also observed with energies ranging from EV + 0.203 eV to EV + 0.526 eV. The irradiated transistor is subjected to isothermal and isochronal annealing. The defects are seen to anneal above 350 °C. The defects generated in the base region of the transistor by displacement damage appear to be responsible for transistor gain degradation.
Journal: Solid-State Electronics - Volume 52, Issue 8, August 2008, Pages 1237–1243