کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
8035201 | 1518047 | 2014 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Low-temperature fabrication of Y2O3/Ge gate stacks with ultrathin GeOx interlayer and low interface states density characterized by a reliable deep-level transient spectroscopy method
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
فناوری نانو (نانو تکنولوژی)
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
Y2O3/Ge gate stacks with ultrathin GeOx interlayer were fabricated by two-step rf sputtering using a Y2O3 target followed by a vacuum-annealing, which were carried out in the same chamber without vacuum breaking. TiN-gate Ge metal-insulator-semiconductor (MIS) capacitors were fabricated with equivalent oxide thicknesses in the range of 2.1-2.3 nm. The highest temperature was 400 °C for the entire fabrication process. Interface states density (Dit) was characterized using a deep-level transient spectroscopy method with optimized injection pulse and quiescent reverse-bias voltages at each temperature. Dit values were approximately 4 Ã 1013, 5 Ã 1011, and 3 Ã 1012 cmâ 2 eVâ 1 at energy positions around valence band, mid-gap, and conduction band, respectively. The slow trap contribution was also small in the upper half of the band-gap, implying a potential application of the Y2O3/Ge gate stack to the fabrication of high-performance Ge-n-MIS field effect transistors.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Thin Solid Films - Volume 557, 30 April 2014, Pages 288-291
Journal: Thin Solid Films - Volume 557, 30 April 2014, Pages 288-291
نویسندگان
Dong Wang, Yuta Nagatomi, Shuta Kojima, Keisuke Yamamoto, Hiroshi Nakashima,