کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1673066 | 1008943 | 2008 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Characterization of electron irradiated GaN n+–p diode
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
فناوری نانو (نانو تکنولوژی)
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Characterization of electron irradiated GaN n+–p diode Characterization of electron irradiated GaN n+–p diode](/preview/png/1673066.png)
چکیده انگلیسی
Electron-beam irradiated GaN n+–p diodes were characterized by deep level transient spectroscopy (DLTS) and optical responsivity measurements. The GaN n+–p diode structures were grown by metal organic chemical vapor deposition technique, and the electron irradiation was done by the energies of 1 MeV and 2 MeV with dose of 1 × 1016 cm− 2. In DLTS measurement, the defect states of Ec − 0.36 eV and Ec − 0.44 eV in the electron irradiated diodes appeared newly. The optical responsivity of GaN n+–p diode was characterized in ultra-violet region, and then the maximum optical responsivity at 350 nm was decreased after electron-beam irradiation.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Thin Solid Films - Volume 516, Issue 11, 1 April 2008, Pages 3482–3485
Journal: Thin Solid Films - Volume 516, Issue 11, 1 April 2008, Pages 3482–3485
نویسندگان
Dong Uk Lee, Eun Kyu Kim, Byung Cheol Lee, Dae Kon Oh,