Keywords: High temperature; GaN; pin; Alpha particle; Detector;
مقالات ISI (ترجمه نشده)
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Keywords: Solar cells; Multi quantum well; InGaN; GaN;
Keywords: Image translation; GAN; Auxiliary domain; Cycle constraint; Cross domain;
Keywords: Angle-resolved X-ray photoelectron spectroscopy (AR-XPS); Density functional theory (DFT); Growth kinetic model; Surface passivation; GaAs; GaN;
Keywords: GaN; Chemical vapour deposition; Photoanode; Photoelectrochemical water splitting;
Keywords: Tribochemistry; Wear mechanism; Humidity; GaN;
Keywords: GaN; Microtube; Rolled-up; Whispering gallery mode (WGM);
Keywords: LED; Semiconductor; Lighting; GaN;
Keywords: Femtosecond laser; Silicon; Transmission electron microscopy; Amorphization; Focused ion beam; GaN; Gallium nitride; Copper; Cu; Nickel; Ni; STO; SrTiO3; Strontium titanate;
Keywords: Polariton; Microcavity; Condensate; ZnO; GaN;
Keywords: Fully nanowire-based; Photodetector; GaN; Chemical vapor deposition;
Keywords: GaN; Porous; IBA-MBE; STEM; Cs-corrected
Keywords: Giant Axonal Neuropathy; GAN; Gigaxonin; Charcot-Marie-Tooth disease; Straight hair; Gross Motor Function Measure;
Keywords: GaN; Surface magnetism; Nanoclusters; Dangling bonds;
Keywords: AN; Anorexia Nervosa; BN; Bulimia Nervosa; AUD; Alcohol Use Disorder; GAN; Genetics of Anorexia Nervosa; SIAB; Structured Interview for Anorexia Nervosa and Bulimic Syndromes; RAN; AN restricting type; PAN; AN purging type; AN-B; AN with binge eating with
Keywords: GAN; Imbalanced learning; Artificial data; Minority class;
Keywords: GaN; HEMT; Polarization; 2DEG
Keywords: GaN; Rare earth doping; GaN:Er3+ nanoparticles; Optical properties; Photoluminescence
Keywords: GaN; MIS-HEMT; Surface treatment; Leakage current; Breakdown voltage; TMAH
Keywords: GaN; Current spreading layer; Surface-texturing; Anti-reflection
Keywords: Current transients; GaN; High-electron mobility transistors (HEMTs); Time constant spectrum; Trapping effect
An improved DRBL AlGaN/GaN HEMT with high power added efficiency
Keywords: GaN; HEMT; IDRBL structure; Power added efficiency;
Effects of thermal annealing on structural and magnetic properties of Mn ions implanted AlInN/GaN films
Keywords: Ion implantation; GaN; X-ray diffraction; Rutherford backscattering spectroscopy; Vibrating sample magnetometry; First principles calculations;
Relationship between the nano-structure of GaN surfaces and SERS efficiency: Chasing hot-spots
Keywords: Nano-structure; GaN; SERS; Hot-spots;
Laser molecular beam epitaxy growth of porous GaN nanocolumn and nanowall network on sapphire (0001) for high responsivity ultraviolet photodetectors
Keywords: GaN; Nanostructure network; Laser molecular beam epitaxy; High resolution x-ray diffraction; Field emission scanning electron microscopy; Raman spectroscopy; Photoluminescence spectroscopy; Metal-semiconductor-metal UV photodetector;
Non-destructive analysis on nano-textured surface of the vertical LED for light enhancement
Keywords: GAN; Vertical LED; Nano-textured surface; Non-destructive techniques (NDT); Surface analysis;
Self-powered GaN ultraviolet photodetectors with p-NiO electrode grown by thermal oxidation
Keywords: P-NiO electrode; Self-powered; Ultraviolet photodetector; GaN;
Combined experimental and numerical approach to study electro-mechanical resonant phenomena in GaN-on-Si heterostructures
Keywords: GaN; Piezoelectric; Vibration; Resonance;
Comparison of reliability of 100â¯nm AlGaN/GaN HEMTs with T-gate and SAG-gate technology
Keywords: GaN; AlGan/GaN; HEMT; Lifetime; Reliability; TEM; Electroluminescence; DC-stress; Arrhenius plot; 100â¯nm gate length; Passivation; Gate technology;
AlGaN/GaN Schottky barrier diodes on silicon substrates with various Fe doping concentrations in the buffer layers
Keywords: AlN; GaN; AlGaN; Schottky barrier diode; Fe-doped; Buffer layer;
Epitaxial integration of 0.7Pb(Mg1/3Nb2/3)O3-0.3PbTiO3 (111) thin films on GaN (0002) with La0.5Sr0.5CoO3/TiO2 buffer layers
Keywords: Ferroelectrics; Thin films; Epitaxial growth; PMN-PT; GaN; Physical vapour deposition;
A simple non-recessed and Au-free high quality Ohmic contacts on AlGaN/GaN: The case of Ti/Al alloy
Keywords: GaN; Ohmic contacts; Contact resistance; Alloy formation;
Femtosecond laser inscription of Bragg gratings on a thin GaN film grown on a sapphire substrate
Keywords: Femtosecond laser micromachining; Bragg gratings; GaN; Ablation;
On-wafer RF stress and trapping kinetics of Fe-doped AlGaN/GaN HEMTs
Keywords: RF stress; GaN; HEMT; Trap; Current collapse;
Effects of 10Â MeV electron irradiation on the characteristics of gallium-nitride-based pin alpha-particle detectors
Keywords: High-energy electron; GaN; Alpha particle; Electron irradiation; Charge collection efficiency;
Degradation in AlGaN/GaN HEMTs irradiated with swift heavy ions: Role of latent tracks
Keywords: GaN; HEMT; Swift heavy ion; Latent track; Electrical characteristics;
Hydrogen sensing characteristics of Pt Schottky diode on nonpolar m-plane 11¯00 GaN single crystals
Keywords: Hydrogen; Gas sensor; GaN; Nonpolar crystal;
Matching in-situ and ex-situ recorded stress gradients in an AlxGa1 â xN Heterostructure: Complementary wafer curvature analyses in time and space
Keywords: GaN; Ion beam layer removal method; Heterostructure; Wafer curvature; Residual stress;
Warm white light-emitting diodes using organic-inorganic halide perovskite materials coated YAG:Ce3+ phosphors
Keywords: YAG phosphors; Perovskite phosphors; White LEDs; GaN;
Evolution of on-resistance (RON) and threshold voltage (VTH) in GaN HEMTs during switch-mode operation
Keywords: GaN; HEMTs; RON degradation; VTH shift;
Etch tapered angle on the influence of GaN membrane grating reflectance spectra
Keywords: GaN; Membrane grating; Tapered angle; RCWA; Reflectance spectra;
Implementation of light extraction improvements of GaN-based light-emitting diodes with specific textured sidewalls
Keywords: GaN; Light-emitting diodes (LEDs); Light extraction efficiency (LEE); Textured sidewalls; Convex; Concave;
Interface trap characterization of Al2O3/GaN vertical-type MOS capacitors on GaN substrate with surface treatments
Keywords: GaN; Vertical-type MOS; Interface states;
Reliability comparison of 28â¯V-50â¯V GaN-on-SiC S-band and X-band technologies
Keywords: GaN; SiC; HEMT; DC-ALT; RF-ALT; Intrinsic reliability; Wear-out;
Leakage current transport mechanism under reverse bias in Au/Ni/GaN Schottky barrier diode
Keywords: GaN; Schottky barrier diode; Leakage current; Variable-range hopping; Poole-Frenkel emission;
Significantly reduced in-plane tensile stress of GaN films grown on SiC substrates by using graded AlGaN buffer and SiNx interlayer
Keywords: GaN; Tensile stress; SiC; Graded AlGaN; SiNx interlayer;
Observation of the early stages of GaN thermal decomposition at 1200â¯Â°C under N2
Keywords: MOVPE; Decomposition; GaN; In situ-reflectance; SEM;
Influence of the AlN nucleation layer on the properties of AlGaN/GaN heterostructure on Si (1â¯1â¯1) substrates
Keywords: MOCVD; GaN; Si (1â¯1â¯1) substrate; AlN nucleation layer;
Characteristic comparison between GaN layer grown on c-plane cone shape patterned sapphire substrate and planar c-plane sapphire substrate by HVPE
Keywords: GaN; Patterned sapphire substrate (PSS); Photoluminescence (PL); CL mapping; Red shift; Growth mechanism;
High-performance GaN-based light emitting diodes grown on 8-inch Si substrate by using a combined low-temperature and high-temperature-grown AlN buffer layer
Keywords: Light emitting diode; GaN; Si substrate; AlN buffer; Electron microscopy;