کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
8014660 | 1517172 | 2018 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Epitaxial integration of 0.7Pb(Mg1/3Nb2/3)O3-0.3PbTiO3 (111) thin films on GaN (0002) with La0.5Sr0.5CoO3/TiO2 buffer layers
دانلود مقاله + سفارش ترجمه
دانلود مقاله ISI انگلیسی
رایگان برای ایرانیان
کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
فناوری نانو (نانو تکنولوژی)
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
0.7Pb(Mg1/3Nb2/3)O3-0.3PbTiO3 (PMN-PT) ferroelectric thin films were epitaxially integrated on GaN (0002) substrates by pulsed laser deposition. La0.5Sr0.5CoO3 (LSCO)/TiO2 buffer layers are designed to decrease the lattice mismatch between PMN-PT and GaN, which promotes the epitaxial growth of pure perovskite PMN-PT (111) thin films. Meanwhile, LSCO/TiO2 heterostructures could be served as the bottom electrodes for integrated ferroelectric devices. Epitaxial relationship of the multilayer is determined to be (111)[11¯0] PMN-PT//(111)[11¯0] LSCO//(100)[001] TiO2//(0002)[112¯0] GaN. The integrated PMN-PT (111) films exhibit good ferroelectric and dielectric properties with remanent polarization of 11.3â¯Î¼C/cm2, coercive field of 34.1â¯kV/cm at 100â¯Hz, dielectric constant of 2035 and dielectric tunability of 68.1% at 1â¯kHz, which make it a potential candidate for the applications in GaN-based integrated ferroelectric devices.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Materials Letters - Volume 216, 1 April 2018, Pages 224-227
Journal: Materials Letters - Volume 216, 1 April 2018, Pages 224-227
نویسندگان
Guanjie Li, Xiaomin Li, Zhijie Bi, Yongbo Chen, Xiaoke Xu,