کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
8148446 1524336 2018 7 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Characteristic comparison between GaN layer grown on c-plane cone shape patterned sapphire substrate and planar c-plane sapphire substrate by HVPE
موضوعات مرتبط
مهندسی و علوم پایه فیزیک و نجوم فیزیک ماده چگال
پیش نمایش صفحه اول مقاله
Characteristic comparison between GaN layer grown on c-plane cone shape patterned sapphire substrate and planar c-plane sapphire substrate by HVPE
چکیده انگلیسی
It is suggested that the structural defects for the sample B were merged in the top region of the pattern during the 1st growth step and TDs were reduced or suppressed during the 2nd growth step in top region of the pattern. The GaN layer grown on PSS (Sample B) exhibited better optical properties and crystal quality than the GaN layer grown on planar c-plane sapphire (Sample A).
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Crystal Growth - Volume 493, 1 July 2018, Pages 8-14
نویسندگان
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