کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
8166000 | 1526224 | 2018 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Effects of 10Â MeV electron irradiation on the characteristics of gallium-nitride-based pin alpha-particle detectors
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
فیزیک و نجوم
ابزار دقیق
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
GaN-based pin alpha-particle detectors grown on sapphire substrates have been subjected to 10Â MeV electron irradiation over a cumulative dose range of 0 to 200Â kGy. The pre- and post-irradiation detectors have been characterized with current-voltage and capacitance-voltage measurements, charge collection efficiency (CCE), and alpha-particle pulse-height spectroscopy. The results show that the performance of the detectors underwent significant changes due to enhanced carrier-hopping conductivity through defect states and deep-level traps in the space-charge region induced by the 10Â MeV electron irradiation. Such detectors can be used for alpha detection with confidence in an environment of background high energy electrons, up to a dose of about 200 kGy, and the response can degrade rapidly if the dose exceeds 200 kGy. In this work, the maximum CCE was achieved in a detectors irradiated with a cumulative dose of 100Â kGy.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment - Volume 902, 11 September 2018, Pages 9-13
Journal: Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment - Volume 902, 11 September 2018, Pages 9-13
نویسندگان
Zhifu Zhu, Jijun Zou, Bin Tang, Zhidong Wang, Xincun Peng, Hongwei Liang, Heqiu Zhang, Guotong Du,