کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
11016503 | 1777112 | 2018 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Combined experimental and numerical approach to study electro-mechanical resonant phenomena in GaN-on-Si heterostructures
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موضوعات مرتبط
مهندسی و علوم پایه
مهندسی کامپیوتر
سخت افزارها و معماری
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Combined experimental and numerical approach to study electro-mechanical resonant phenomena in GaN-on-Si heterostructures Combined experimental and numerical approach to study electro-mechanical resonant phenomena in GaN-on-Si heterostructures](/preview/png/11016503.png)
چکیده انگلیسی
Due to the intrinsic piezoelectric nature of Gallium Nitride (GaN), devices manufactured with such technology are in principle prone to experience electro-mechanically induced resonance phenomena under operating conditions. In this paper, we present the thorough approach combining simulation and experiment to study the occurrence and implications of such electro-mechanical resonances. A simple GaN-on-Si capacitor test structure was fabricated and electrically excited in order to activate the mechanical eigenmodes of the assembly which are measured by a Laser-Doppler-Scanning-Vibrometer. A multiphysics Finite Element (FE) model of the tested structures was built in order to perform harmonic analysis and to quantitatively study the effects of damping on displacement, stress and strain. A mathematical comparison on different aspects between the model and measurements show good agreement. This successfully verifies the methodology to model the dynamic resonance behaviour of piezoelectric active chips.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Microelectronics Reliability - Volumes 88â90, September 2018, Pages 389-392
Journal: Microelectronics Reliability - Volumes 88â90, September 2018, Pages 389-392
نویسندگان
F.P. Pribahsnik, M. Bernardoni, M. Nelhiebel, M. Mataln, A. Lindemann,