کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
11016502 | 1777112 | 2018 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Comparison of reliability of 100â¯nm AlGaN/GaN HEMTs with T-gate and SAG-gate technology
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی کامپیوتر
سخت افزارها و معماری
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Comparison of reliability of 100â¯nm AlGaN/GaN HEMTs with T-gate and SAG-gate technology Comparison of reliability of 100â¯nm AlGaN/GaN HEMTs with T-gate and SAG-gate technology](/preview/png/11016502.png)
چکیده انگلیسی
The effect of gate technology and semiconductor passivation on the switching speed and device reliability has been investigated. By reducing the parasitic capacitances and reducing the passivation induced surface charge density a median lifetime of around 106â¯h at a channel temperature of 125â¯Â°C and a current-gain cut-off frequency of 74â¯GHz for a T-gate technology has been achieved. By electroluminescence and TEM cross-sectioning of a stressed device a local inhomogeneous pit formation process was found as the major degradation mechanism for the decrease of the saturation current.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Microelectronics Reliability - Volumes 88â90, September 2018, Pages 385-388
Journal: Microelectronics Reliability - Volumes 88â90, September 2018, Pages 385-388
نویسندگان
M. Dammann, M. Baeumler, P. Brückner, T. Kemmer, H. Konstanzer, A. Graff, M. Simon-Najasek, R. Quay,