Keywords: Electron spin resonance; Electron paramagnetic resonance; ESR; EPR; HEMT; Single chip detector;
مقالات ISI (ترجمه نشده)
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Keywords: ACh+; Acetylcholine; AOCB[6]; (Allyloxy)12 cucurbit[6]uril; AFM; Atomic force microscopy; cAMP; 3',5'-Cyclic monophosphate; ChemFET; Chemical field-effect transistor; CB[6]; Cucurbit[6]uril; DDFTTF; 5,5â²-Bis-(7-dodecyl-9Hfluoren-2-yl)-2,2â²-bithiop
Keywords: DC; direct current; AC; alternating current; MOSFET; metaloxidesemiconductor field-effect transistor; SBD; Schottky barrier diodes; MPPT; maximum power point tracking; PWM; pulse width modulation; JFET; junction field-effect transistor; BJT; bipolar junct
Keywords: Brightness temperature; HEMT; Ultra-low power consumption; 2DEG; Back action
Keywords: AlN/GaN/AlGaN; HEMT; CPW; Semiconductor device measurements; Small signal model
Keywords: GaN; HEMT; Polarization; 2DEG
An improved DRBL AlGaN/GaN HEMT with high power added efficiency
Keywords: GaN; HEMT; IDRBL structure; Power added efficiency;
Comparison of reliability of 100â¯nm AlGaN/GaN HEMTs with T-gate and SAG-gate technology
Keywords: GaN; AlGan/GaN; HEMT; Lifetime; Reliability; TEM; Electroluminescence; DC-stress; Arrhenius plot; 100â¯nm gate length; Passivation; Gate technology;
On-wafer RF stress and trapping kinetics of Fe-doped AlGaN/GaN HEMTs
Keywords: RF stress; GaN; HEMT; Trap; Current collapse;
A new electro-optical transmission-line measurement-method revealing a possible contribution of source and drain contact resistances to GaN HEMT dynamic on-resistance
Keywords: HEMT; Gallium Nitride; Transmission line measurement; Source and drain contact resistances; UV illumination; Trapping phenomena; Dynamic on-resistance;
Degradation in AlGaN/GaN HEMTs irradiated with swift heavy ions: Role of latent tracks
Keywords: GaN; HEMT; Swift heavy ion; Latent track; Electrical characteristics;
Reliability comparison of 28â¯V-50â¯V GaN-on-SiC S-band and X-band technologies
Keywords: GaN; SiC; HEMT; DC-ALT; RF-ALT; Intrinsic reliability; Wear-out;
Study of microwave damage effect on HEMT low noise amplifier under different drain voltage bias
Keywords: HEMT; Multi-stage LNA; Microwave; Damage effect; Different drain bias;
Positive and negative threshold voltage instabilities in GaN-based transistors
Keywords: GaN; Transistor; NBTI; PBTI; Degradation; HEMT;
SQUID amplifiers for axion search experiments
Keywords: SQUID; MSA; HEMT; Axion; Microwave; Amplifier;
State of the art on gate insulation and surface passivation for GaN-based power HEMTs
Keywords: GaN; AlGaN; InAlN; HEMT; MIS; MOS; Surface passivation; Interface states;
Polarization engineered enhancement mode GaN HEMT: Design and investigation
Keywords: GaN; HEMT; AlN; Polarization engineering; Enhancement mode; Thermal analysis;
Current collapse modeling in AlGaN/GaN HEMT using small signal equivalent circuit for high power application
Keywords: AlGaN; Current collapse; GaN; HEMT; HighPower; Small signal model;
Emerging trends in wide band gap semiconductors (SiC and GaN) technology for power devices
Keywords: Wide band gap semiconductors; SiC; GaN; MOSFET; HEMT; Power electronics;
Control of short-channel effects in InAlN/GaN high-electron mobility transistors using graded AlGaN buffer
Keywords: InAlN/GaN; Graded AlGaN; HEMT; Back barrier; Short-channel effects;
Enhancement of breakdown voltage in AlGaN/GaN HEMT using passivation technique for microwave application
Keywords: AlGaN; Breakdown voltage; GaN; HEMT; High power; High frequency;
Growth of quaternary InAlGaN barrier with ultrathin thickness for HEMT application
Keywords: AlInGaN; InAlGaN; HEMT; Growth mechanism; MOCVD;
Surface stoichiometry modification and improved DC/RF characteristics by plasma treated and annealed AlGaN/GaN HEMTs
Keywords: RF; HEMT; Plasma treatment; AlGaN/GaN;
Hydrogen sulfide detection properties of Pt-gated AlGaN/GaN HEMT-sensor
Keywords: AlGaN/GaN; Pt; HEMT; H2S; Gas sensor; 2DEG;
XPS/NEXAFS spectroscopic and conductance studies of glycine on AlGaN/GaN transistor devices
Keywords: NEXAFS; XPS; HEMT; Sensor; Zwitterion; Transistor;
High-temperature carrier density and mobility enhancements in AlGaN/GaN HEMT using AlN spacer layer
Keywords: AlGaN; GaN; HEMT; EER; PL; Hall effect measurement;
High temperature storage test and its effect on the thermal stability and electrical characteristics of AlGaN/GaN high electron mobility transistors
Keywords: AlGaN/GaN; HEMT; High temperature storage; Reliability; Gate contact;
Study of the enhancement-mode AlGaN/GaN high electron mobility transistor with split floating gates
Keywords: AlGaN/GaN; HEMT; Split floating gates; Enhancement-mode;
High resolution physical analysis of ohmic contact formation at GaN-HEMT devices
Keywords: HEMT; Ohm contact; TOF-SIMS; TEM;
Stability of AlGaN/GaN heterostructures after hydrogen plasma treatment
Keywords: AlGaN/GaN heterostructure; Hydrogen plasma; SIMS; TLM; HEMT;
Optimization of ohmic contact for AlGaNGaN HEMT by introducing patterned etching in ohmic area
Keywords: AlGaNGaN; HEMT; Ohmic contact; Patterned etching; Surface morphology;
Extraction method for parasitic capacitances and inductances of HEMT models
Keywords: HEMT; Small-signal model; Parasitic capacitances and inductances; Extraction method;
Influence of mesa edge capacitance on frequency behavior of millimeter-wave AlGaN/GaN HEMTs
Keywords: AlGaN/GaN; HEMT; Small-signal; Mesa; Capacitance;
Analysis of degradation mechanisms in AlInN/GaN HEMTs by electroluminescence technique
Keywords: AlInN; GaN; HEMT; Electron traps; Electrical stress; Reliability; Electroluminescence technique;
DC and microwave characteristics of Lg 50Â nm T-gate InAlN/AlN/GaN HEMT for future high power RF applications
Keywords: HEMT; 2DEG; Back-barrier; Cut-off frequency; DC and Microwave characteristics;
DC and microwave characteristics of 20Â nm T-gate InAlN/GaN high electron mobility transistor for high power RF applications
Keywords: HEMT; Back-barrier; Recessed gate; Cut-off frequency; Short channel effects;
Static and dynamic characteristics of Lg 50Â nm InAlN/AlN/GaN HEMT with AlGaN back-barrier for high power millimeter wave applications
Keywords: HEMT; 2DEG; Static and dynamic characteristics; Cut-off frequency; Back-barrier;
Identification of the spatial location of deep trap states in AlGaN/GaN heterostructures by surface photovoltage spectroscopy
Keywords: AlGaN/GaN; HEMT; Defects; SPS; PL; MBE;
Influence of gate leakage current induced shot noise on the Minimum Noise Figure of InAlAs/InGaAs double-gate HEMT
Keywords: Double-gate; Gate leakage; Hot carrier; HEMT; InAlAs/InGaAs; Minimum noise figure; Noise; Shot noise;
A survey of Gallium Nitride HEMT for RF and high power applications
Keywords: HEMT; Trap; Field plate; 2DEG; Polarization;
Improvement of RF performance for AlGaN/GaN HEMT by using a cavity structure
Keywords: GaN; HEMT; Cavity structure; Parasitic capacitance;
Source extension region scaling for AlGaN/GaN high electron mobility transistors using non-alloyed ohmic contacts
Keywords: GaN/AlGaN; HEMT; Scaling
New Al0.25Ga0.75N/GaN high electron mobility transistor with partial etched AlGaN layer
Keywords: HEMT; Electric field modulation effect; Power device
Correlation of carbon doping variations with the vertical breakdown of GaN-on-Si for power electronics
Keywords: GaN-on-Si; Power electronic device; HEMT; Vertical breakdown; Carbon doping; Microstructural investigation;
Lifetime tests of 600-V GaN-on-Si power switches and HEMTs
Keywords: GaN-on-Si power switch; GaN-on-silicon switch; GaN switch; Reliability; Accelerated life tests; HEMT; Cascode; HTRB; HTOS; HTOL; Field acceleration factor; Temperature acceleration factor;
Trapping and reliability issues in GaN-based MIS HEMTs with partially recessed gate
Keywords: Gallium nitride; HEMT; Trapping; Defect; Degradation; Breakdown;
Differential-mode HEMT-based biosensor for real-time and label-free detection of C-reactive protein
Keywords: GaN; HEMT; Biosensor; Differential-mode; CRP;
Normally-off GaN-HEMTs with p-type gate: Off-state degradation, forward gate stress and ESD failure
Keywords: Gallium nitride; HEMT; Degradation; Breakdown; ESD;
Post drain-stress behavior of AlGaN/GaN-on-Si MIS-HEMTs
Keywords: GaN; HEMT; Trapping; Stress;
Comparison of electrical, optical and structural properties of epitaxially grown HEMT's type AlGaN/AlN/GaN heterostructures on Al2O3, Si and SiC substrates
Keywords: AlGaN/AlN/GaN; Heterostructures; HEMT; Si; Al2O3; SiC; 2DEG;