کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
7938733 | 1513183 | 2018 | 15 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Growth of quaternary InAlGaN barrier with ultrathin thickness for HEMT application
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موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
مواد الکترونیکی، نوری و مغناطیسی
پیش نمایش صفحه اول مقاله

چکیده انگلیسی
Quaternary InAlGaN barriers with thickness of 7â¯nm for HEMT application were grown on 3-inch semi-insulating 4H-SiC substrates by metal organic chemical vapor deposition (MOCVD). Focused on growth mechanism of the InAlGaN barrier, the surface morphology and characteristics of InAlGaN/AlN/GaN heterostructures were studied with different growth parameters, including the temperature, Al/Ga ratio and chamber pressure. Among the as-grown samples, high electron mobility is consistent with smooth surface morphology, while high crystalline quality of the quaternary barrier is confirmed by measurements of Photoluminescence (PL) and Mercury-probe Capacity-Voltage (C-V). The recommended heterostructures without SiN passivation is characterized by mobility of 1720 cm2/(V·s), 2DEG density of 1.71*1013â¯cmâ2, sheet resistance of about 210â¯Î©/â¡ with a smooth surface morphology and moderate tensile state, specially applied for microwave devices.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Superlattices and Microstructures - Volume 118, June 2018, Pages 213-220
Journal: Superlattices and Microstructures - Volume 118, June 2018, Pages 213-220
نویسندگان
Zhonghui Li, Chuanhao Li, Daqing Peng, Dongguo Zhang, Xun Dong, Lei Pan, Weike Luo, Liang Li, Qiankun Yang,