کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
7938733 1513183 2018 15 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Growth of quaternary InAlGaN barrier with ultrathin thickness for HEMT application
موضوعات مرتبط
مهندسی و علوم پایه مهندسی مواد مواد الکترونیکی، نوری و مغناطیسی
پیش نمایش صفحه اول مقاله
Growth of quaternary InAlGaN barrier with ultrathin thickness for HEMT application
چکیده انگلیسی
Quaternary InAlGaN barriers with thickness of 7 nm for HEMT application were grown on 3-inch semi-insulating 4H-SiC substrates by metal organic chemical vapor deposition (MOCVD). Focused on growth mechanism of the InAlGaN barrier, the surface morphology and characteristics of InAlGaN/AlN/GaN heterostructures were studied with different growth parameters, including the temperature, Al/Ga ratio and chamber pressure. Among the as-grown samples, high electron mobility is consistent with smooth surface morphology, while high crystalline quality of the quaternary barrier is confirmed by measurements of Photoluminescence (PL) and Mercury-probe Capacity-Voltage (C-V). The recommended heterostructures without SiN passivation is characterized by mobility of 1720 cm2/(V·s), 2DEG density of 1.71*1013 cm−2, sheet resistance of about 210 Ω/□ with a smooth surface morphology and moderate tensile state, specially applied for microwave devices.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Superlattices and Microstructures - Volume 118, June 2018, Pages 213-220
نویسندگان
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