کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
7117903 | 1461369 | 2018 | 11 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
State of the art on gate insulation and surface passivation for GaN-based power HEMTs
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
سایر رشته های مهندسی
مهندسی برق و الکترونیک
پیش نمایش صفحه اول مقاله
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چکیده انگلیسی
In this article, we review recent progress on AlGaN/GaN and InAlN/GaN metal-insulator-semiconductor high-electron-mobility transistors (MIS-HEMTs) using Al-based oxides, nitride dielectrics, SiO2 and high-k dielectrics. Although GaN MIS-HEMTs have been suffering from the instability of threshold voltage (VTH), recent interface technologies using in-situ SiNx and surface oxidation of (Al)GaN achieved excellent DC and dynamic performances of GaN MIS-HEMTs with stable VTH. Furthermore, a new design of the gate dielectric such as a nanolaminate structure has been applied to GaN HEMTs. GaN-based MIS-HEMTs sometimes showed sudden current saturation at forward gate bias, and we discuss effects of electronic states at insulator-semiconductor interfaces on current linearity of GaN MIS-HEMTs. Finally, we present effective surface passivation schemes in conjunction with field-plate structures and emerging device structures utilizing multi nanochannels under the gate region.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Materials Science in Semiconductor Processing - Volume 78, May 2018, Pages 85-95
Journal: Materials Science in Semiconductor Processing - Volume 78, May 2018, Pages 85-95
نویسندگان
Tamotsu Hashizume, Kenya Nishiguchi, Shota Kaneki, Jan Kuzmik, Zenji Yatabe,