Keywords: حالت های رابط; Mechanical honeycomb lattice; In-plane elastic wave; Valley Hall insulator; Chern insulator; Spin Hall insulator; Interface states;
مقالات ISI حالت های رابط (ترجمه نشده)
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Keywords: حالت های رابط; Photocapacitance; Interface states; Phototransistors; Photovoltaic effect; poly(3-hexylthiophene);
Keywords: حالت های رابط; Series resistance; barrier height; interface states; insulating layer
Keywords: حالت های رابط; Organic thin film transistors; Interface states; Photo-conductance; Energy density of states; Pentacene
High resolution observation of defects at SiO2/4H-SiC interfaces using time-resolved scanning nonlinear dielectric microscopy
Keywords: حالت های رابط; Interface states; Silicon carbide; Deep level transient spectroscopy;
Quantum anomalous Hall conductivity in 3D magnetic topological insulator/normal insulator heterostructures
Keywords: حالت های رابط; Topological insulator; Quantum anomalous Hall effect; Interface states;
Interface trap characterization of Al2O3/GaN vertical-type MOS capacitors on GaN substrate with surface treatments
Keywords: حالت های رابط; GaN; Vertical-type MOS; Interface states;
Role of AlGaN/GaN interface traps on negative threshold voltage shift in AlGaN/GaN HEMT
Keywords: حالت های رابط; AlGaN/GaN HEMT; Interface states; Reverse gate bias stress; TCAD ATLAS simulation; Threshold-Voltage Shift;
Electronic properties of NiO (1â¯1â¯0)/CH3NH3PbI3 (1â¯0â¯0) interface from the first-principles calculations
Keywords: حالت های رابط; First-principles calculations; Electronic properties; NiO (1â¯1â¯0)/MAPbI3 (1â¯0â¯0) interface; Interface states;
State of the art on gate insulation and surface passivation for GaN-based power HEMTs
Keywords: حالت های رابط; GaN; AlGaN; InAlN; HEMT; MIS; MOS; Surface passivation; Interface states;
Thermal stress probing the channel-length modulation effect of nano n-type FinFETs
Keywords: حالت های رابط; Device model; Temperature effect; Drain current; Interface states; CLM; FinFET;
Interface induced quantized spin Hall response in three-dimensional topological insulator/normal insulator heterostructures
Keywords: حالت های رابط; Topological insulator; Quantum spin Hall effect; Interface states;
Electronic structures and optical properties of the CdTe/CdS heterojunction interface from the first-principles calculations
Keywords: حالت های رابط; CdTe/CdS interface; First-principles calculations; Density of states; Interface states; Optical properties;
The Co-60 gamma-ray irradiation effects on the Al/HfSiO4/p-Si/Al MOS capacitors
Keywords: حالت های رابط; HfSiO4 MOS capacitors; Irradiation Hard Material; Interface states; Oxide trapped charges; High-k;
Interface state generation of Al2O3/InGaAs MOS structures by electrical stress
Keywords: حالت های رابط; Electrical stress; Interface states; Al2O3/InGaAs; Hole trapping; Constant current stress; Negative bias stress;
Passivation for Cu2ZnSnS4/WZ-ZnO interface states: From the first principles calculations
Keywords: حالت های رابط; First-principles calculations; CZTS/WZ-ZnO interface; Passivation; Interface states; Charge analysis;
Investigation of 'surface donors' in Al2O3/AlGaN/GaN metal-oxide-semiconductor heterostructures: Correlation of electrical, structural, and chemical properties
Keywords: حالت های رابط; AlGaN/GaN; MOS-HEMT; Surface donors; Interface states;
Influence of oxidation temperature on the interfacial properties of n-type 4H-SiC MOS capacitors
Keywords: حالت های رابط; 4H-SiC MOS capacitors; Thermal oxidation temperature; Interfacial properties; Effective fixed dielectric charge; Near interface traps; Interface states;
The decisive effect of interface states on the photocatalytic activity of the silver(I) oxide/titanium dioxide heterojunction
Keywords: حالت های رابط; Interface states; Nanoheterojunction; Photocatalytic activity; Potential barrier;
Electrical and photovoltaic properties of Ag/p-Si structure with GO doped NiO interlayer in dark and under light illumination
Keywords: حالت های رابط; Ag/Go doped NiO/p-Si structure; Interlayer; Main electrical parameters; Interface states;
Impacts of growth orientation and N incorporation on the interface-states and the electrical characteristics of Cu/GaAsN Schottky barrier diodes
Keywords: حالت های رابط; GaAsN; Schottky barrier diodes (SBDs); Growth orientation; C-V and G/Ï-V characteristics; Interface states;
High temperature and voltage dependent electrical and dielectric properties of TiN/Al2O3/p-Si MIS structure
Keywords: حالت های رابط; Temperature dependence; Voltage dependence; Interface states; Series resistance; MOS structure; Electrical and dielectric properties; Conductivity;
Effects of Ta-oxide interlayer on the Schottky barrier parameters of Ni/n-type Ge Schottky barrier diode
Keywords: حالت های رابط; Schottky barrier diode; Ta-oxide; Interface states; Ge; Ni; Current conduction;
First-principles study on electronic properties and lattice structures of WZ-ZnO/CdS interface
Keywords: حالت های رابط; First-principles calculation; WZ-ZnO/CdS interface; Density of states; Interface bonding energy; Interface states
Poly(melamine-co-formaldehyde) methylated effect on the interface states of metal/polymer/p-Si Schottky barrier diode
Keywords: حالت های رابط; Poly(4-vinyl phenol); Poly(melamine-co-formaldehyde) methylated; Schottky barrier diode; Interface states
III-V/Ge MOS device technologies for low power integrated systems
Keywords: حالت های رابط; MOSFET; Tunneling FET; Germanium; III-V semiconductors; Metal-Oxide-Semiconductor; Mobility; Interface states;
Questing and the application for silicon based ternary compound within ultra-thin layer of SIS intermediate region
Keywords: حالت های رابط; XPS; Si based compound; Interface states; SIS device;
Impact of metal electrode on charge transport behavior of metal-Gd2O3 systems
Keywords: حالت های رابط; Gd2O3; Metal electrodes; Hopping conduction; Mott VRH; Interface states
Capacitance-conductance-frequency characteristics of Au/Ni/n-GaN/undoped GaN Structures
Keywords: حالت های رابط; 73.30.+y; 73.40.Ns; 73.40.QvGaN semiconductor; Metal-semiconductor contacts; interface states; Frequency-dependent capacitance; Frequency-dependent conductance characteristics; Schottky barrier diode
Frequency dependent gamma-ray irradiation response of Sm2O3 MOS capacitors
Keywords: حالت های رابط; Sm2O3 MOS capacitors; Irradiation effects; Interface states; Oxide trapped charges
Interface characteristics of spin-on-dielectric SiOx-buffered passivation layers for AlGaN/GaN high electron mobility transistors
Keywords: حالت های رابط; AlGaN/GaN HEMT; Perhydropolysilazane; Spin-on-dielectric passivation buffer; Interface states; C–V measurement
Comparison of analytic distribution function models for hot-carrier degradation modeling in nLDMOSFETs
Keywords: حالت های رابط; Distribution function; Hot-carrier degradation; nLDMOS transistor; Spherical harmonics expansion; Drift-diffusion scheme; Interface states; Modeling;
The origin of forward bias capacitance peak and voltage dependent behaviour of gold/p-type indium phosphide Schottky barrier diode fabricated by photolithography
Keywords: حالت های رابط; Semiconductors: InP; Schottky diode; Interface states
The impact of interface states on the mobility and drive current of In0.53Ga0.47AsIn0.53Ga0.47As semiconductor n-MOSFETs
Keywords: حالت های رابط; Monte Carlo; III–V semiconductors; Border traps; Interface states; Modelling
Lattice structures and electronic properties of MO/MoSe2 interface from first-principles calculations
Keywords: حالت های رابط; First-principles calculation; Mo/MoSe2 interface; Density of states; Interface bonding energy; Interface states
The electrical characterizations and illumination response of Co/N-type GaP junction device
Keywords: حالت های رابط; GaP semiconductor; Thermionic emission; Interface states; Illumination impact; Schottky barrier height
Modifications and multiple roles of graphene film in SIS structural solar cells
Keywords: حالت های رابط; Graphene film; Modification roles; Solar cell structure; Interface states; Fermi pinning effect;
Lattice structures and electronic properties of WZ-CuInS2/MoS2 interface from first-principles calculations
Keywords: حالت های رابط; First-principles calculation; WZ-CuInS2/MoS2 interface; Density of states; Interface bonding energy; Interface states;
Effects of gamma-ray irradiation on interface states and series-resistance characteristics of BiFeO3 MOS capacitors
Keywords: حالت های رابط; Radiation effects; Ferroelectric BiFeO3 MOS capacitor; Interface states; Series resistance;
UV illumination effects on electrical characteristics of metal–polymer–semiconductor diodes fabricated with new poly(propylene glycol)-b-polystyrene block copolymer
Keywords: حالت های رابط; A. Fibres; A. Layered structures; B. Electrical properties; D. Electron microscopy; Interface states
Frequency dependent electrical characteristics of BiFeO3 MOS capacitors
Keywords: حالت های رابط; BiFeO3 MOS capacitor; Interface states; Series resistance; Conductance; XRD
Influence of the oxide–semiconductor interface on the resistive switching phenomenon in metal/Al2O3/InGaAs
Keywords: حالت های رابط; Resistive switching; Interface states; InGaAs
The effect of frequency and temperature on capacitance/conductance–voltage (C/G–V) characteristics of Au/n-GaAs Schottky barrier diodes (SBDs)
Keywords: حالت های رابط; Au/n-GaAs SBDs; Admittance spectroscopy; Interface states; Series resistance
Electrical characteristics of β-Ga2O3 thin films grown by PEALD
Keywords: حالت های رابط; PEALD; Al/β-Ga2O3/p-Si; Interface states; Metal–oxide–semiconductor
Study of the energy distribution of the interface trap density in a GeSn MOS structure by numerical simulation of the electrical characteristics
Keywords: حالت های رابط; GeSn; MOS; Interface states; Admittance spectroscopy; Electrical characterization; Numerical simulation;
Physical and electrical characteristics of metal/Dy2O3/p-GaAs structure
Keywords: حالت های رابط; High-k dielectric; Dy2O3; Metal-oxide-semiconductor; Electrical properties; Conduction mechanism; Interface states
Structural evolution and defect control of yttrium-doped ZrO2 films grown by a sol-gel method
Keywords: حالت های رابط; ZrO2; Zriconium oxide; Yttrium doped Zriconium oxide; Interface states; Defect; XAS; X-ray absorption spectroscopy; HRXPS; high resolution X-ray photoelectron spectroscopy; REELS; reflection electron energy loss spectroscopy; DFT; density functional theor
Statistical characterization of vertical poly-Si channel using charge pumping technique for 3D flash memory optimization
Keywords: حالت های رابط; 3D flash memory; Poly silicon; Charge pumping; Interface states; Annealing; Optimization;
The interface states and series resistance analyzing of Au/SiO2/n-GaAs at high temperatures
Keywords: حالت های رابط; Au/SiO2/GaAs Schottky diodes; Interface states; Insulator layer; I-V characteristics;
Acoustic spectroscopy and electrical characterization of Si/NAOS-SiO2/HfO2 structures
Keywords: حالت های رابط; 73.40.Qv; 73.20.Hb; Acoustic DLTS; MOS structures; NAOS SiO2/HfO2 oxide layer; Interface states;