High temperature and voltage dependent electrical and dielectric properties of TiN/Al2O3/p-Si MIS structure

The electrical and dielectric properties of TiN/Al2O3/p-Si MIS structure were studied in the temperature range of 380-450 K at 1 MHz. These properties were calculated from experimental C−V and G/ω−V measurements. Experimental results show that the forward bias C−V plots exhibit a distinct peak at high temperatures, this Kind of behavior is mostly attributed to the series resistance (Rs) and interface states (Nss) between Al2O3/p-Si. The temperature and bias voltage dependence of dielectric constant (ε′), dielectric loss (ε″), dielectric loss tangent (tanδ) and the ac electrical conductivity (σac) are studied for TiN/Al2O3/p-Si MIS structure. Experimental results show that the values of ε′ and ε″ depend on the variation of both bias voltage and temperature. The C−V and G/ω−V characteristics prove that the Rs and Nss of the diode are important parameters that strongly influence the electric parameters in MIS device. The density of Nss, depending on the temperature, was determined from the C−V and G/ω−V data using the Hill-Coleman Method. The Arrhenius plot of the ac conductivity at 1 MHz is illustrated and the activation energy is found to be Ea=0.012eV. Moreover, the electric modulus formalisms were employed to understand the relaxation mechanism of the TiN/Al2O3/p-Si structure.