کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
8002649 | 1516316 | 2013 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
The interface states and series resistance analyzing of Au/SiO2/n-GaAs at high temperatures
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
فلزات و آلیاژها
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
The current-voltage (I-V) characteristics of Au/SiO2/n-GaAs metal-oxide-semiconductor (MOS) type Schottky barrier diodes (SBDs) have been measured in the temperature range of 300-400Â K with 25Â K steps. From the I-V characteristics of SBDs, the zero-bias barrier height ÏBo and ideality factor (n) assuming the thermionic emission (TE) mechanism show strong temperature dependence. While n decreases, ÏBo increases with increasing temperature. The obtained values of ÏBo and n varied from 0.81Â eV and 1.33 at 300Â K and 0.93Â eV and 1.12 at 400Â K, respectively. In addition, the interface states distribution profile (Nss) as a function of temperature was extracted from the forward-bias I-V measurements by taking into account the bias dependence of the effective barrier height Ïe and series resistance (Rs) for the SBDs. The values of Rs were performed using the Cheung's method. Thus, important electrical parameters as a function of temperature were analyzed by using the I-V measurements.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Alloys and Compounds - Volume 577, 15 November 2013, Pages 143-147
Journal: Journal of Alloys and Compounds - Volume 577, 15 November 2013, Pages 143-147
نویسندگان
H. Altuntas, S. Ozcelik,