Keywords: ویژگی های I-V; Graphene; Polyaniline; I-V characteristics; Composite; Band gap;
مقالات ISI ویژگی های I-V (ترجمه نشده)
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International round-robin inter-comparison of dye-sensitized and crystalline silicon solar cells
Keywords: ویژگی های I-V; Round-robin inter-comparison; Dye-sensitized solar cell; Crystalline silicon reference cell; Spectral responsivity; I-V characteristics;
Keywords: ویژگی های I-V; Single wall bamboo-shape carbon nanotubes; I-V characteristics; Transmission pathways; NDR effect; Molecular devices; Electronic transport;
Keywords: ویژگی های I-V; Te nanowires; Ion irradiation; XRD; UV-visible; I-V characteristics;
Keywords: ویژگی های I-V; PV parameter extraction; I-V characteristics; PV modeling; Single-diode model; Double-diode model;
Keywords: ویژگی های I-V; Mono atomic carbon chains; I-V characteristics; Transmission spectrum; NEGF-DFT; Rectification ratio; Multi switching;
Keywords: ویژگی های I-V; Zinc sulphide; Biopolymer matrix; XRD; TEM; Dielectric constant; I-V characteristics;
Keywords: ویژگی های I-V; Lambert function; Single diode solar cell model; Parameters extraction; I-V characteristics;
Keywords: ویژگی های I-V; Solar cell; Parameters extraction; TLBO algorithm; I-V characteristics;
Keywords: ویژگی های I-V; Non-uniform irradiance; I-V characteristics; Non-imaging planar concentrator; Concentrator photovoltaic; Dense array; Simulink;
Keywords: ویژگی های I-V; Layered nanosheets; I-V characteristics; Phenol; Chemical sensor; Electrochemical impedance spectroscopy;
Keywords: ویژگی های I-V; Multiwalled carbon nanotubes; Functionalization; Raman; HR-TEM; I-V characteristics; H2 sensing;
Formation of GaN thin film on silicon substrate by gallium oxide ammoniation
Keywords: ویژگی های I-V; Gallium nitride; Gallium oxide; Ammoniation; X-ray diffraction; I-V Characteristics; Photodiode;
Irreversibility in room temperature current-voltage characteristics of NiFe2O4 nanoparticles: A signature of electrical memory effect
Keywords: ویژگی های I-V; I-V characteristics; Electrical irreversibility; Hysteresis; Nanoparticles; NiFe2O4;
Switching function of the diphenylacetylene molecule between carbon nanotubes & carbon chain: A DFT study
Keywords: ویژگی های I-V; (5,5) Capped single wall carbon nanotubes; I-V characteristics; NDR effect; Molecular switch; Electronic transport;
SiC polytypes and doping nature effects on electrical properties of ZnO-SiC Schottky diodes
Keywords: ویژگی های I-V; ZnO/SiC; SiC polytypes; I-V characteristics; C-V-f measurements; Electrical properties;
Electrical properties of Al/PTB7-Th/n-Si metal-polymer-semiconductor Schottky barrier diode
Keywords: ویژگی های I-V; Schottky barrier diode; PTB7-Th; I-V characteristics; Rectification;
Manipulating the structure of polyaniline by exploiting redox chemistry: Novel p-NiO/n-polyaniline/n-Si Schottky diode based chemosensor for the electrochemical detection of hydrazinobenzene
Keywords: ویژگی های I-V; Polyaniline; NiO; Schottky barrier diode; Chemical sensor; Hydrazinobenzene; I-V characteristics;
Electrical characterization of Cu Schottky contacts to n-type GaAsN grown on (311)A/B GaAs substrates
Keywords: ویژگی های I-V; GaAsN; Schottky diode; Growth orientation; I-V characteristics; C-V characteristics; Electrical properties;
Optical absorbance and ohmic behavior of PANI and PANI/ZnO nanocomposites for solar cell application
Keywords: ویژگی های I-V; Nanocomposite thin film; Optical properties; I-V characteristics; Solar cell; Optical band gap;
New Nd-doped lead zirconate Pb1â1.5xNdxZrO3 nanocrystals: Fabrication via wet chemical route for electrical and dielectric parameters evaluation
Keywords: ویژگی های I-V; Lead zirconate nanocrystals; Co-precipitation; XRD; FTIR; Dielectric properties; I-V characteristics;
Studies on p-TiO2/n-graphene heterojunction for hydrogen detection
Keywords: ویژگی های I-V; CVD graphene; Sol-gel TiO2; TiO2/graphene interface; p-n heterojunction; I-V characteristics; H2 sensor;
Influence of the counter ion on the properties of organic and inorganic acid doped polyaniline and their Schottky diodes
Keywords: ویژگی های I-V; Schottky diode; Supporting electrode; Polyaniline; I-V characteristics;
Effect of the side-chain size on the optical and electrical properties of confined-PPV derivatives
Keywords: ویژگی های I-V; Semi-conducting polymers; Poly(p-phenylene vinylene (R); Ï-Ï interaction; Space-charge-limited current (SCLC); I-V characteristics; Impedance spectroscopy (IS);
A procedure to calculate the I-V characteristics of thin-film photovoltaic modules using an explicit rational form
Keywords: ویژگی های I-V; Thin-film photovoltaic modules; Five-parameter model; I-V characteristics; Solar energy;
A new explicit I-V model of a silicon solar cell based on Chebyshev Polynomials
Keywords: ویژگی های I-V; I-V characteristics; Explicit I-V model; Chebyshev Polynomials; Analytical model;
Modifications in structural and electrical properties of gamma irradiated CdSe nanowires
Keywords: ویژگی های I-V; Nanowires; Gamma irradiation; XRD; I-V characteristics;
Effects of PCBM concentration on the electrical properties of the Au/P3HT:PCBM/n-Si (MPS) Schottky barrier diodes
Keywords: ویژگی های I-V; P3HT:PCBM organic blend layer; PCBM concentration; Schottky barrier diodes; I-V characteristics;
Electronic properties of a single heterojunction in InSb/InAs quantum dot system
Keywords: ویژگی های I-V; 68.37.Ps; 81.07.Ta; 81.15.Lm; 81.15.Gh; 81.16.Dn; LPE; Quantum dots; Heterostructures; III-V semiconductors; AFM; I-V characteristics;
The interface states and series resistance analyzing of Au/SiO2/n-GaAs at high temperatures
Keywords: ویژگی های I-V; Au/SiO2/GaAs Schottky diodes; Interface states; Insulator layer; I-V characteristics;
Blue-green and red luminescence from non-polar ZnO:Pb films
Keywords: ویژگی های I-V; Non-polar; Chemical state; Optical band gap; White light; I-V characteristics;
Effect of cathode shape on vertical buffered electropolishing for niobium SRF cavities
Keywords: ویژگی های I-V; Niobium SRF cavities; Buffered electropolishing; Electropolishing; I-V characteristics;
Photoluminescence and I-V characteristics of the carbonized silicon nanoporous pillar array
Keywords: ویژگی های I-V; 3C-SiC nanocrystals; Silicon nanoporous pillar array; Photoluminescence; I-V characteristics;
An explicit approximate I-V characteristic model of a solar cell based on padé approximants
Keywords: ویژگی های I-V; Solar cells; I-V characteristics; Analytical model; Explicit I-V model; Photovoltaic power generation;
Influence of substrate on coupling of high temperature superconducting Josephson junction arrays
Keywords: ویژگی های I-V; HTS JJAs; I-V characteristics; Substrate; Radiation; Electromagnetic simulation;
Investigation of the electrical properties of a new PPV derivative-based on a sandwich structure for opto-electronic applications
Keywords: ویژگی های I-V; PPVS; I-V characteristics; Space charge limited current (SCLC); Impedance spectroscopy (IS);
Improvement of photoluminescence and electrical properties of porous silicon layer treated with lanthanum
Keywords: ویژگی های I-V; Porous silicon (PS); Lanthanum (La); Photoluminescence (PL); I-V characteristics;
The effect of PVA (Bi2O3-doped) interfacial layer and series resistance on electrical characteristics of Au/n-Si (110) Schottky barrier diodes (SBDs)
Keywords: ویژگی های I-V; Bi2O3-doped PVA; Metal-polymer-semiconductor (MPS); Series resistance effect; I-V characteristics;
Hydrazine chemical sensing by modified electrode based on in situ electrochemically synthesized polyaniline/graphene composite thin film
Keywords: ویژگی های I-V; Polyaniline; Graphene; I-V characteristics; Hydrazine chemical sensor; Sensitivity;
Electrical characteristics of Au substituted 2,6-Bis-phenylethynyl-dithieno[3,2-b;2â²,3â²-d]thiophene (BPDTT) molecule against external electric fields: A quantum chemical and charge density study
Keywords: ویژگی های I-V; Electric field; HOMO-LUMO gap; Density of states; Electrostatic potential; Dipole moment; I-V characteristics;
Calculation of on-state I-V characteristics of LDMOSFETs based on an accurate LDD resistance modeling
Keywords: ویژگی های I-V; LDMOSFET; LDD resistance; I-V characteristics; Analytical modeling;
Comparison on plasticity of current-driven vortex lattices in as-grown and heavy ion irradiated microbridge Bi2Sr2Ca1Cu2O8+δ single crystals
Keywords: ویژگی های I-V; Flux pinning; Irradiation effect; I-V characteristics; Peak effect;
Effect of vacuum annealing and hydrogenation on ZnSe/Mn multilayer diluted magnetic semiconductor thin films
Keywords: ویژگی های I-V; MLs DMS thin films; Vacuum annealing; Hydrogenation; I-V characteristics; Raman spectroscopy; Surface topography;
The analysis of the charge transport mechanism of n-Si/MEH-PPV device structure using forward bias I-V-T characteristics
Keywords: ویژگی های I-V; 73.40.Sx; 73.40.Qv; 73.30.+y; 73.40.Ns; 84.37.+q; 61.80.âx; Schottky diodes; I-V characteristics; Ideality factor; Series resistance; Barrier height; MEH-PPV; Heterojunction diode;
Modification of the surface state and doping of CdTe and CdZnTe crystals by pulsed laser irradiation
Keywords: ویژگی های I-V; 72.40.+w; 73.40.Ei; 73.40.Lq; 61.72.uj; 29.40.Wk; CdTe and CdZnTe barrier structures; Laser irradiation; Photoconductivity; I-V Characteristics;
I-V characteristics and magnetic field profile studies in high Tc BSCCO based Helmholtz coil
Keywords: ویژگی های I-V; 74.25.Fy; 74.60.Jg; 74.25.Ha; 74.72.Hs; I-V characteristics; Critical currents; Field profiles; BSCCO tape;
Diffraction efficiency and I-V characteristics of metal-free phthalocyanine doped nematic liquid crystals
Keywords: ویژگی های I-V; Phthalocyanine; Nematic; Liquid crystal; Diffraction efficiency; Fluorescence; I-V characteristics;
I-V characteristics of a methanol sensor for direct methanol fuel cell (DMFC) as a function of deposited platinum (Pt) thickness
Keywords: ویژگی های I-V; DMFC; Methanol sensor; Catalyst electrode; I-V characteristics;
Inhomogeneities in 130Â MeV Au12+ ion irradiated Au/n-Si (1Â 0Â 0) Schottky structure
Keywords: ویژگی های I-V; 61.80.Jh; 73.30.+y; 73.40.âc; 73.40.QV; Ion irradiation; Schottky barrier; I-V characteristics;
Electrical and optical properties of thermally evaporated Ge20In5Se75 films
Keywords: ویژگی های I-V; Electrical conductivity; Optical constants; I-V characteristics; Ge20In5Se75 films;