کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
5364928 1388323 2008 5 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Inhomogeneities in 130 MeV Au12+ ion irradiated Au/n-Si (1 0 0) Schottky structure
موضوعات مرتبط
مهندسی و علوم پایه شیمی شیمی تئوریک و عملی
پیش نمایش صفحه اول مقاله
Inhomogeneities in 130 MeV Au12+ ion irradiated Au/n-Si (1 0 0) Schottky structure
چکیده انگلیسی
The electrical characteristics of Au/n-Si (1 0 0) Schottky rectifier have been studied in a wide irradiation fluence range using conventional current-voltage (I-V) and capacitance-voltage (C-V) measurements. The I-V characteristics showed an abnormal increase in forward current at low voltage. The device shows a bend in forward I-V and reverses bias C-V characteristics due to extra current, suggesting that there are two independent contributions to thermionic current, corresponding to two levels of the Schottky barrier. It is shown that the excess current at low voltage can be explained by taking into account the role of heavy ion irradiation induced defects at the metal semiconductor interface.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Applied Surface Science - Volume 254, Issue 11, 30 March 2008, Pages 3277-3281
نویسندگان
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