The effect of PVA (Bi2O3-doped) interfacial layer and series resistance on electrical characteristics of Au/n-Si (110) Schottky barrier diodes (SBDs)

► SBDs with/out Bi2O3-doped PVA were fabricated and measured at room temperature. ► Bi2O3-doped PVA layer affected main electrical parameters positively. ► Nss values without series resistance (Rs) are lower than those with Rs. ► Existence of Bi2O3-doped PVA layer decreased leakage current in SBDs. ► Existence of Bi2O3-doped PVA layer also decreased density of interface states.