کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
5435582 1509356 2016 7 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Electrical properties of Al/PTB7-Th/n-Si metal-polymer-semiconductor Schottky barrier diode
موضوعات مرتبط
مهندسی و علوم پایه مهندسی مواد بیومتریال
پیش نمایش صفحه اول مقاله
Electrical properties of Al/PTB7-Th/n-Si metal-polymer-semiconductor Schottky barrier diode
چکیده انگلیسی


- A metal-polymer-semiconductor (MPS) Schottky Barrier Diode (SBD), Al/PTB7-Th/n-Si, has been successfully fabricated and investigated using I-V characteristics.
- The nonlinear I-V characteristics revealed rectifying behavior of the diode.
- The obtained experimental results of the Al/PTB7-Th/n-Si MPS SBD are compared with simulated results and are found in good agreement.
- The MPS SBD based on PTB7-Th showed improvement in the diode parameters and mobility of PTB7-Th interfacial layer when compared with previously reported polymer based SBD.

In the present study, poly{4,8-bis[5-(2-ethylhexyl)thiophen-2-yl]benzo[1,2-b:4,5-b']dithiophene-2,6-diyl-alt-3-fluoro-2-[(2-ethylhexyl)carbonyl]thieno[3,4-b]thiophene-4,6-diyl} (PTB7-Th) was used to fabricate a novel Al/PTB7-Th/n-Si metal-polymer-semiconductor (MPS) Schottky barrier diode (SBD). The Al/PTB7-Th/n-Si MPS SBD was prepared by employing a spin-coating system and a thermal evaporator for the deposition of PTB7-Th thin film and metal contacts, respectively. The electrical properties of the Al/PTB7-Th/n-Si MPS SBD were investigated by current-voltage method at room temperature in order to extract its main electrical parameters such as ideality factor (n), barrier height (Φb0), series resistance (Rs) and shunt resistance (Rsh). The I-V characteristics revealed nonlinear behavior due to the effect of Rs and ideality factor larger than unity. From the I-V curves, the values of ideality factor and barrier height of the diode were found to be 3.5 and 0.58 eV, respectively. The electrical parameters were verified by Cheung's and Norde's functions. The parameters determined by all the three methods were found to be in great agreement. The conduction mechanism of the diode was also studied. The simple and cost effective approach used for the fabrication of Al/PTB7-Th/n-Si MPS SBD demonstrates its potential for being used in the state-of-the-art high-quality electronic and optoelectronic devices.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Synthetic Metals - Volume 221, November 2016, Pages 169-175
نویسندگان
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