کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
5361663 1388275 2009 4 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Modification of the surface state and doping of CdTe and CdZnTe crystals by pulsed laser irradiation
موضوعات مرتبط
مهندسی و علوم پایه شیمی شیمی تئوریک و عملی
پیش نمایش صفحه اول مقاله
Modification of the surface state and doping of CdTe and CdZnTe crystals by pulsed laser irradiation
چکیده انگلیسی
The photoelectric and electrical properties of high-resistivity p-like CdTe and Cd0.96Zn0.04Te single crystals and barrier structures on their base before and after laser irradiation in different conditions are studied. Irradiation of samples with nanosecond ruby laser pulses was carried out in two different ways. In the first case, the Cd(Zn)Te crystals were subjected to laser action directly from the surface and irradiation within a certain range of intensities resulted in a decrease in the surface recombination rate and increase in the photoconductivity signal. The surface region with a wider bandgap in CdZnTe crystals was formed. In the second case, the samples were irradiated from the side pre-coated with a relatively thick In dopant film and it caused rectification in the I-V characteristics as a result of laser-induced doping of the thin Cd(Zn)Te surface region and formation of a built-in p-n junction. The application of the fabricated M-p-n structured In/Cd(Zn)Te/Au diodes for X-ray and γ-ray detectors is discussed.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Applied Surface Science - Volume 255, Issue 24, 30 September 2009, Pages 9813-9816
نویسندگان
, , , , , ,