کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1607328 | 1516236 | 2016 | 21 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Electrical characterization of Cu Schottky contacts to n-type GaAsN grown on (311)A/B GaAs substrates
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
فلزات و آلیاژها
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
The contact behavior of Cu on n-type GaAsN, grown on (100) and (311)A/B GaAs substrates by chemical beam epitaxy, has been investigated by current-voltage (I-V) and capacitance-voltage (C-V) measurements. Both N incorporation and growth orientation are found to influence the electrical properties of Cu/GaAsN Schottky diodes. The increasing N composition leads to an increase in the ideality factor and Schottky barrier height (C-V), whereas a decrease in the carrier concentration in samples with all adopted growth orientations. Compared with (100) and (311)B samples, the Schottky diodes constructed on (311)A GaAsN epilayer exhibit better performance with ideality factor close to 1 and higher barrier height. The interfacial chemical reaction between metal layer and surface atoms on the growth surface is believed to account for the observations.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Alloys and Compounds - Volume 657, 5 February 2016, Pages 325-329
Journal: Journal of Alloys and Compounds - Volume 657, 5 February 2016, Pages 325-329
نویسندگان
Chen Dong, Xiuxun Han, Xin Gao, Yoshio Ohshita, Masafumi Yamaguchi,