کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
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6473119 | 1424142 | 2016 | 12 صفحه PDF | دانلود رایگان |
New and effective chemosensor was fabricated using p-nickel oxide (NiO)/n-conducting polyaniline (PANI) based Schottky barrier diode for the detection of hydrazinobenzene chemical. The n-PANI was synthesized through in-situ chemical doping of PANI EB by using calcium hydride as dopant and subjected to elemental analysis, optical, structural and morphological properties. The appearance of a non-linear I-V behavior at the interface of Pt and p-NiO/n-PANI layer confirmed the formation of Schottky junction of the fabricated Pt/p-NiO/n-PANI/n-Si Schottky barrier diode. The electrochemical properties of Pt/p-NiO/n-PANI/n-Si Schottky barrier diode towards the detection of hydrazinobenzene were elucidated by cyclovoltametry (CV) measurements. The sensing results revealed that the Pt/p-NiO/n-PANI/n-Si Schottky barrier diode exhibited a stable, reliable high sensitivity â¼90.5 μA mMâ1 cmâ2, good detection limit of â¼5.11 μM with correlation coefficient (R) of â¼0.99417 and short response time (10 s). Herein, n-type chemical doping of PANI and the formation of Schottky barrier elicited the sensing parameters such as sensitivity, detection limit and correlation coefficient.
Journal: Electrochimica Acta - Volume 215, 10 October 2016, Pages 200-211