کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
6473119 1424142 2016 12 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Manipulating the structure of polyaniline by exploiting redox chemistry: Novel p-NiO/n-polyaniline/n-Si Schottky diode based chemosensor for the electrochemical detection of hydrazinobenzene
موضوعات مرتبط
مهندسی و علوم پایه مهندسی شیمی مهندسی شیمی (عمومی)
پیش نمایش صفحه اول مقاله
Manipulating the structure of polyaniline by exploiting redox chemistry: Novel p-NiO/n-polyaniline/n-Si Schottky diode based chemosensor for the electrochemical detection of hydrazinobenzene
چکیده انگلیسی

New and effective chemosensor was fabricated using p-nickel oxide (NiO)/n-conducting polyaniline (PANI) based Schottky barrier diode for the detection of hydrazinobenzene chemical. The n-PANI was synthesized through in-situ chemical doping of PANI EB by using calcium hydride as dopant and subjected to elemental analysis, optical, structural and morphological properties. The appearance of a non-linear I-V behavior at the interface of Pt and p-NiO/n-PANI layer confirmed the formation of Schottky junction of the fabricated Pt/p-NiO/n-PANI/n-Si Schottky barrier diode. The electrochemical properties of Pt/p-NiO/n-PANI/n-Si Schottky barrier diode towards the detection of hydrazinobenzene were elucidated by cyclovoltametry (CV) measurements. The sensing results revealed that the Pt/p-NiO/n-PANI/n-Si Schottky barrier diode exhibited a stable, reliable high sensitivity ∼90.5 μA mM−1 cm−2, good detection limit of ∼5.11 μM with correlation coefficient (R) of ∼0.99417 and short response time (10 s). Herein, n-type chemical doping of PANI and the formation of Schottky barrier elicited the sensing parameters such as sensitivity, detection limit and correlation coefficient.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Electrochimica Acta - Volume 215, 10 October 2016, Pages 200-211
نویسندگان
, , ,