کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1620456 | 1516387 | 2010 | 6 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
The analysis of the charge transport mechanism of n-Si/MEH-PPV device structure using forward bias I-V-T characteristics
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
فلزات و آلیاژها
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
In this study, temperature dependent current-voltage (I-V) measurements and investigation of the dc current transport mechanism of n-Si/MEH-PPV device have been performed. While the series resistance value displayed strongly temperature dependent behaviour, the ideality factor varied between 3.2 and 1.8 in the temperature range 110-330Â K. The temperature dependent ideality factor behaviour at low temperature region (110-220Â K) shows that tunnelling enhanced recombination is valid rather than thermionic emission theory and the characteristic tunnelling energy is calculated as 30Â meV. There is a slightly linear relationship between the ideality factor and temperature at region II (230-330Â K) which is attributed to drift-diffusion current transport in the n-Si/MEH-PPV device as stated already by Osvald.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Alloys and Compounds - Volume 492, Issues 1â2, 4 March 2010, Pages 421-426
Journal: Journal of Alloys and Compounds - Volume 492, Issues 1â2, 4 March 2010, Pages 421-426
نویسندگان
A. Sertap Kavasoglu, Fahrettin Yakuphanoglu, Nese Kavasoglu, Osman Pakma, Ozcan Birgi, Sener Oktik,