کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
5491728 | 1525122 | 2017 | 16 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Impacts of growth orientation and N incorporation on the interface-states and the electrical characteristics of Cu/GaAsN Schottky barrier diodes
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موضوعات مرتبط
مهندسی و علوم پایه
فیزیک و نجوم
فیزیک ماده چگال
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چکیده انگلیسی
The frequency dependent capacitance-voltage (C-V) and conductance-voltage (G/Ï-V) characteristics of Schottky barrier diodes (SBDs) with Cu contacts on Si doped GaAsN epilayers with (100) and (311)A/B orientations have been investigated in the frequency range from 20Â kHz to 1Â MHz at room temperature. C, G/Ï and the deduced series resistance (Rs) show strong dependences on the applied frequency in the forward bias region, which is closely correlated to the frequency-dependent response of interface states (Nss). In GaAsN SBDs with all three growth orientations, the increasing N composition is found to increase the peak value of capacitance and enhance its dependence on frequency, which thus implies a general rule that increasing N incorporation causes an increase in Nss. The increasing extent of Nss due to N incorporation, however, differs a lot for different growth orientations as analyzed by using Hill-Coleman method. It is revealed that (311)B is the promising growth orientation to suppress the Nss generation over a wider N composition range in GaAsN Schottky devices. The reduced formation probability of non-substitutional N due to the efficient N incorporation on the (311)B plane is considered to be responsible for the observations.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Physica B: Condensed Matter - Volume 527, 15 December 2017, Pages 52-56
Journal: Physica B: Condensed Matter - Volume 527, 15 December 2017, Pages 52-56
نویسندگان
Chen Dong, Xiuxun Han, Jian Li, Xin Gao, Yoshio Ohshita,