Statistical characterization of vertical poly-Si channel using charge pumping technique for 3D flash memory optimization

- We analyzed the charge pumping signals in ultra-scaled 3D vertical devices.
- Statistical analysis has been used to characteristic the variability of poly-Si channel.
- The quality of bottom and top junctions with different process has been presented.
- Different poly-Si formations and hole sizes have been investigated.
- Different annealing conditions have been carried out for optimization of the channel of 3D flash memory.