Keywords: شارژ پمپاژ; Polysilicon; Charge pumping; Channel trap density; Trap distribution; Grain size effect; Hot carrier injection
مقالات ISI شارژ پمپاژ (ترجمه نشده)
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Keywords: شارژ پمپاژ; Hot carrier; MOSFET; TiN; Interface trap; Charge pumping
On the turn-around phenomenon in n-MOS transistors under NBTI conditions
Keywords: شارژ پمپاژ; Turn-around phenomenon; NBTI; n-MOSFETs; Charge pumping; Interface-trap; Border-trap
Statistical characterization of vertical poly-Si channel using charge pumping technique for 3D flash memory optimization
Keywords: شارژ پمپاژ; 3D flash memory; Poly silicon; Charge pumping; Interface states; Annealing; Optimization;
Effects of mechanical-bending and process-induced stresses on metal effective work function
Keywords: شارژ پمپاژ; MOSFETs; Effective work function; Stress; Wafer bending; Interface state; Charge pumping
Charge pumping and DCIV currents in SOI FinFETs
Keywords: شارژ پمپاژ; Charge pumping; ACIV; Floating body effects; SOI
A comparative study of depth profiling of interface states using charge pumping and low frequency noise measurement in SiO2/HfO2 gate stack nMOSFETs
Keywords: شارژ پمپاژ; Low frequency noise; Charge pumping; HfO2/SiO2 gate stack; HCI; PBTI
Investigation of spatial and energetic trap distributions in 1Â nm EOT SiO2/HfO2 by discharging-sweep mode amplitude charge pumping
Keywords: شارژ پمپاژ; Charge de-trapping; High-k gate stack; Trap profile; Charge pumping; MOSFET;
Study of nitrogen impact on VFB–EOT roll-off by varying interfacial SiO2 thickness
Keywords: شارژ پمپاژ; VFB roll-off; Nitrogen; Charge pumping; NBTI; Dielectric reliability
Invariant imbedding theory of charge pumping in quantum wires
Keywords: شارژ پمپاژ; Mesoscopic transport; Charge pumping; Quantum wire; Invariant imbedding approach; Density functional theory; Green's function;
A study of N-induced traps due to a nitrided gate in high-κ/metal gate nMOSFETs and their impact on electron mobility
Keywords: شارژ پمپاژ; Metal gate; Interface states; Charge pumping; Mobility;
Comparison of positive and negative bias-temperature instability on MOSFETs with HfO2/LaOx and HfO2/AlOx dielectric stacks
Keywords: شارژ پمپاژ; Charge pumping; High-κ; Trap generation; BTI; MOS device
Detailed analysis of charge pumping and IdVg hysteresis for profiling traps in SiO2/HfSiO(N)
Keywords: شارژ پمپاژ; Charge pumping; HfSiO(N); Energy and spatial distribution of traps
Effect of Si capping layer on the interface quality and NBTI of high mobility channel Ge-on-Si pMOSFETs
Keywords: شارژ پمپاژ; Ge pMOSFET; NBTI; Interface trap; High mobility channel; Charge pumping
Experimental evidence of suppression on oxygen vacancy formation in Hf based high-κ gate dielectrics with La incorporation
Keywords: شارژ پمپاژ; Charge pumping; Oxygen vacancy; High-κ
Electrical characterization of high-k gate dielectrics on semiconductors
Keywords: شارژ پمپاژ; Electrical characterization; High-k dielectrics; Semiconductors; MOSFET; IETS; Charge pumping; Lateral profiling;
Study of SiO2/Si interface properties of SON MOSFETs by random telegraph signal and charge pumping measurements
Keywords: شارژ پمپاژ; Charge pumping; Single trap; Deep-submicron MOS; SON technology
Transient charge pumping as an efficient technique to measure low light intensity with PD SOI MOSFET
Keywords: شارژ پمپاژ; Charge pumping; Light sensor; SOI MOSFET; Phototransistor
Analysis of slow traps centres in submicron MOSFETs by random telegraph signal technique
Keywords: شارژ پمپاژ; Submicron MOSFETS; RTS; Single traps; Charge pumping; Si–SiO2 interface
Fowler–Nordheim and hot carrier reliabilities of U-shaped trench-gated transistors studied by three terminal charge pumping
Keywords: شارژ پمپاژ; Charge pumping; Fowler–Nordheim stress; Hot carrier stress; MOSFET
New Charge Pumping model for the analysis of the spatial trap distribution in the nitride layer of SONOS devices
Keywords: شارژ پمپاژ; SONOS; Charge Pumping; nitride traps; trap distribution; modeling;
Characterization of ultra-thin SiO2 by capacitance-voltage and charge pumping measurements
Keywords: شارژ پمپاژ; Charge pumping; Ultra-thin SiO2; Gate dielectric; MOSFET; Quantum effects;