کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
753208 | 895502 | 2010 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Comparison of positive and negative bias-temperature instability on MOSFETs with HfO2/LaOx and HfO2/AlOx dielectric stacks
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موضوعات مرتبط
مهندسی و علوم پایه
سایر رشته های مهندسی
مهندسی برق و الکترونیک
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
The modified charge-pumping (CP) techniques were applied to characterize the trap distribution as well as its related reliability problems for MOSFETs with HfO2/LaOx and HfO2/AlOx high-κ gate stacks. It is found that the positive bias temperature (PBT) and negative bias temperature (NBT) stresses would cause different kinds of traps generated at different locations. The negative bias causes even more damage than positive bias on nMOS devices. The generation of Nit caused by BT stress is uniform through whole channel, no matter positive bias or negative bias. The generation of border trap (Nbt) caused by NBT stress is much more and deeper than that caused by PBT one.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Solid-State Electronics - Volume 54, Issue 11, November 2010, Pages 1474–1478
Journal: Solid-State Electronics - Volume 54, Issue 11, November 2010, Pages 1474–1478
نویسندگان
Chun-Chang Lu, Kuei-Shu Chang-Liao, Che-Hao Tsao, Tien-Ko Wang,