کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
6945603 | 1450517 | 2018 | 6 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Reliability comparison of 28â¯V-50â¯V GaN-on-SiC S-band and X-band technologies
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی کامپیوتر
سخت افزارها و معماری
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Reliability comparison of 28â¯V-50â¯V GaN-on-SiC S-band and X-band technologies Reliability comparison of 28â¯V-50â¯V GaN-on-SiC S-band and X-band technologies](/preview/png/6945603.png)
چکیده انگلیسی
This paper discusses the reliability performance of Wolfspeed GaN/AlGaN high electron mobility transistor (HEMT) MMIC released process technologies, fabricated on 100â¯mm high purity semi-insulating (HPSI) 4H-SiC substrates. The intrinsic reliability performances of the 28â¯V and 40â¯V technologies, with 400â¯nm and 250â¯nm gate length, have been characterized with DC accelerated life test (DC-ALT), for which ohmic contact inter-diffusion is the wear-out mechanism, and is accelerated by temperature and current. The intrinsic reliability performance of the 50â¯V technologies, with 400â¯nm gate length, have been characterized with RF-ALT, for which source-connected second field plate void coalescence is the wear-out mechanism which is accelerated by temperature. In spite of the differences in the accelerated test methodologies and wear-out mechanisms, all of the Wolfspeed GaN-on-SiC technologies demonstrate high and similar predicted lifetimes at their respective maximum recommended operating conditions. The reliability performance is supported with successful technology qualifications with zero failures, and volume manufacturing with a demonstrated low field failure rate.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Microelectronics Reliability - Volume 84, May 2018, Pages 1-6
Journal: Microelectronics Reliability - Volume 84, May 2018, Pages 1-6
نویسندگان
Donald A. Gajewski, Satyaki Ganguly, Scott Sheppard, Simon Wood, Jeff B. Barner, Jim Milligan, John Palmour,