کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
4971704 | 1450534 | 2016 | 6 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Correlation of carbon doping variations with the vertical breakdown of GaN-on-Si for power electronics
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موضوعات مرتبط
مهندسی و علوم پایه
مهندسی کامپیوتر
سخت افزارها و معماری
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چکیده انگلیسی
In this work gallium nitride (GaN) grown on silicon substrates was investigated in order to determine critical defects responsible for differences in the vertical breakdown of HEMT structures. Cathodoluminescence studies at the SEM revealed a direct correlation between the intensity of the blue luminescence (BL) band and the carbon doping concentration. Observing this, carbon depletion zones were found around threading dislocations in the active GaN layer, as well as a deep depletion in growth columns concluded from a reduction of the BL intensity. Using the given results a model of a defect, here called the deep carbon depletion (DCD), is proposed to explain the correlation between carbon variations and the vertical breakdown.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Microelectronics Reliability - Volume 66, November 2016, Pages 16-21
Journal: Microelectronics Reliability - Volume 66, November 2016, Pages 16-21
نویسندگان
Michael Knetzger, Elke Meissner, Joff Derluyn, Marianne Germain, Jochen Friedrich,