کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
11016507 | 1777112 | 2018 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
A new electro-optical transmission-line measurement-method revealing a possible contribution of source and drain contact resistances to GaN HEMT dynamic on-resistance
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موضوعات مرتبط
مهندسی و علوم پایه
مهندسی کامپیوتر
سخت افزارها و معماری
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: A new electro-optical transmission-line measurement-method revealing a possible contribution of source and drain contact resistances to GaN HEMT dynamic on-resistance A new electro-optical transmission-line measurement-method revealing a possible contribution of source and drain contact resistances to GaN HEMT dynamic on-resistance](/preview/png/11016507.png)
چکیده انگلیسی
Despite their potential in the field of power electronics, many reliability issues still affect the electrical performance of Gallium Nitride HEMT power devices and require an effort of analysis and understanding. The characterization of the on-state resistance of this transistor is necessary to understand the dynamics of some phenomena such as trapping. The degradation of this resistance has always been related to traps in the 2DEG channel, without taking into consideration possible contributions from the source and drain contacts (metal/semiconductor). In this work, resistance measurements, with and without ultra-violet illumination, are performed on three different technological options to highlight the effect of illumination on contact resistances.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Microelectronics Reliability - Volumes 88â90, September 2018, Pages 406-410
Journal: Microelectronics Reliability - Volumes 88â90, September 2018, Pages 406-410
نویسندگان
D. Hachem, D. Trémouilles, F. Morancho, G. Toulon,