کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
7938975 | 1513185 | 2018 | 13 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Control of short-channel effects in InAlN/GaN high-electron mobility transistors using graded AlGaN buffer
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
مواد الکترونیکی، نوری و مغناطیسی
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چکیده انگلیسی
A graded AlGaN buffer is designed to realize the p-type buffer by inducing polarization-doping holes. Based on the two-dimensional device simulator, the effect of the graded AlGaN buffer on the direct-current (DC) and radio-frequency (RF) performance of short-gate InAlN/GaN high-electron mobility transistors (HEMTs) are investigated, theoretically. Compared to standard HEMT, an enhancement of electron confinement and a good control of short-channel effect (SCEs) are demonstrated in the graded AlGaN buffer HEMT. Accordingly, the pinched-off behavior and the ability of gate modulation are significantly improved. And, no serious SCEs are observed in the graded AlGaN buffer HEMT with an aspect ratio (LG/tch) of about 6.7, much lower than that of the standard HEMT (LG/tchâ¯=â¯13). In addition, for a 70-nm gate length, a peak current gain cutoff frequency (fT) of 171â¯GHz and power gain cutoff frequency (fmax) of 191â¯GHz are obtained in the grade buffer HEMT, which are higher than those of the standard one with the same gate length.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Superlattices and Microstructures - Volume 116, April 2018, Pages 207-214
Journal: Superlattices and Microstructures - Volume 116, April 2018, Pages 207-214
نویسندگان
Tiecheng Han, Hongdong Zhao, Xiaocan Peng, Yuhai Li,