Keywords: اثرات کوتاه مدت; Dual-k spacer; Junctionless transistor; Short-channel effects;
مقالات ISI اثرات کوتاه مدت (ترجمه نشده)
مقالات زیر هنوز به فارسی ترجمه نشده اند.
در صورتی که به ترجمه آماده هر یک از مقالات زیر نیاز داشته باشید، می توانید سفارش دهید تا مترجمان با تجربه این مجموعه در اسرع وقت آن را برای شما ترجمه نمایند.
در صورتی که به ترجمه آماده هر یک از مقالات زیر نیاز داشته باشید، می توانید سفارش دهید تا مترجمان با تجربه این مجموعه در اسرع وقت آن را برای شما ترجمه نمایند.
Multi-Subband Ensemble Monte Carlo simulations of scaled GAA MOSFETs
Keywords: اثرات کوتاه مدت; Gate-all-around MOSFET; Nanowire; Monte Carlo simulation; Multi-subband; Short-channel effects;
Control of short-channel effects in InAlN/GaN high-electron mobility transistors using graded AlGaN buffer
Keywords: اثرات کوتاه مدت; InAlN/GaN; Graded AlGaN; HEMT; Back barrier; Short-channel effects;
Geometry and temperature effects on the threshold voltage characteristics of silicon nanowire MOS transistors
Keywords: اثرات کوتاه مدت; Silicon nanowire; Corner effects; Temperature effects; Short-channel effects;
Two dimensional electron gas in a hybrid GaN/InGaN/ZnO heterostructure with ultrathin InGaN channel layer
Keywords: اثرات کوتاه مدت; InGaN; GaN; ZnO; 2DEG; Short-channel effects
The impact of stress-induced defects on MOS electrostatics and short-channel effects
Keywords: اثرات کوتاه مدت; Interface traps; Oxide-trapped charge; Short-channel effects; MOS electrostatics; Scaling length; Reliability
Compact model of short-channel effects for FDSOI devices including the influence of back-bias and fringing fields for Si and III–V technology
Keywords: اثرات کوتاه مدت; SOI; VDT; Compact modeling; MASTAR; Short-channel effects; III–V
Analytical study of Dual Material Surrounding Gate MOSFET to suppress short-channel effects (SCEs)
Keywords: اثرات کوتاه مدت; Short-channel effects; Dual material gate structure; Surrounding gate MOSFET; Surface potential; Electric field; Threshold voltage
A rigorous simulation based study of gate misalignment effects in gate engineered double-gate (DG) MOSFETs
Keywords: اثرات کوتاه مدت; TMDG MOSFET; DMDG MOSFET; Gate misalignment; Short-channel effects; DIBL; Drain current;
Full quantum simulation study of a nano tri-material double gate silicon-on-insulator MOSFET
Keywords: اثرات کوتاه مدت; Tri-material gate; Quantum effects; Silicon-on-insulator MOSFET; Short-channel effects
Simulation study of Short-Channel Effects and quantum confinement in double-gate FinFET devices with high-mobility materials
Keywords: اثرات کوتاه مدت; High-mobility semiconductors; Short-Channel Effects; Quantum confinement; DG MOSFET; Simulation
Contact resistance dependent scaling-down behavior of amorphous InGaZnO thin-film transistors
Keywords: اثرات کوتاه مدت; InGaZnO; Thin-film transistors; Short-channel effects; Contact resistance
Cylindrical surrounding-gate MOSFETs with electrically induced source/drain extension
Keywords: اثرات کوتاه مدت; Cylindrical surrounding gate MOSFETs; Induced source/drain; Short-channel effects; Hot carrier effects; Three-dimensional simulation;
A surface potential based drain current model for asymmetric double gate MOSFETs
Keywords: اثرات کوتاه مدت; Asymmetric double gate MOSFET; Poisson's equation; Pao-Sah's double integral; Short-channel effects;
A unified short-channel compact model for cylindrical surrounding-gate MOSFET
Keywords: اثرات کوتاه مدت; Device modeling; Gate-all-around MOSFET; Short-channel effects; Surface potential model;
Physics-based compact model for ultra-scaled FinFETs
Keywords: اثرات کوتاه مدت; FinFET; Compact model; Short-channel effects; Quantum mechanical effects; Transcapacitance; Circuit simulation
Analysis of subthreshold conduction in short-channel recessed source/drain UTB SOI MOSFETs
Keywords: اثرات کوتاه مدت; Silicon-on-insulator; Recessed source/drain SOI; Two-dimensional (2-D) Poisson’s equation; Subthreshold slope; Short-channel effects
Suppression of corner effects in wide-channel triple-gate bulk FinFETs
Keywords: اثرات کوتاه مدت; Body-tied; Bulk; Corner effect; FinFET; Kink effect; Short-channel effects; Triple-gate MOSFET
Scaling of analog LDPC decoders in sub-100 nm CMOS processes
Keywords: اثرات کوتاه مدت; Analog decoders; Sub-threshold; Mismatch; FEC decoders; LDPC; Sum-product; Leakage currents; Short-channel effects; Threshold voltage
Microwave performance enhancement in Double and Single Gate HEMT with channel thickness variation
Keywords: اثرات کوتاه مدت; DGHEMT; SGHEMT; Transconductance; Output-conductance; Cut-off frequency; Maximum frequency of oscillation; Unloaded voltage gain; Channel thickness; Short-channel effects; Device aspect ratio
FDSOI devices with thin BOX and ground plane integration for 32 nm node and below
Keywords: اثرات کوتاه مدت; SOI; Metal gate; Short-channel effects; Fully-depleted; BOX; DIBL; Subthreshold slope
Analytical model of short-channel gate enclosed transistors using Green functions
Keywords: اثرات کوتاه مدت; Rad-hard transistors; Short-channel effects; DIBL; Device modeling
Folded fully depleted FET using Silicon-On-Nothing technology as a highly W-scaled planar solution
Keywords: اثرات کوتاه مدت; Folded FET; Ultra thin body; Ultra thin BOX; UTB2; SON; Wafer orientation; Short-channel Effects; Fully-depleted; DIBL; Subthreshold slope
Novel attributes in the performance and scaling effects of carbon nanotube field-effect transistors with halo doping
Keywords: اثرات کوتاه مدت; Carbon nanotube; Field-effect transistor; Halo doping; Hot-carrier effect; Leakage current; Short-channel effects; Subthreshold swing
Impact of graded channel (GC) design in fully depleted cylindrical/surrounding gate MOSFET (FD CGT/SGT) for improved short channel immunity and hot carrier reliability
Keywords: اثرات کوتاه مدت; 85.30.Tv; 85.30.−z; 73.40.Qv; 47.27.E−Device modeling; Surrounding gate MOSFET; Short-channel effects; Graded channel
Device performance and optimization of decananometer long double gate MOSFET by Monte Carlo simulation
Keywords: اثرات کوتاه مدت; Double gate MOSFET; Short-channel effects; Monte Carlo simulation; Strained Si;
A new symmetrical double gate nanoscale MOSFET with asymmetrical side gates for electrically induced source/drain
Keywords: اثرات کوتاه مدت; Short-channel effects; MOSFET; Threshold voltage; Two-dimensional simulation; Induced source/drain
Quantum Short-channel Compact Modelling of Drain-Current in Double-Gate MOSFET
Keywords: اثرات کوتاه مدت; Compact modelling; Double-Gate MOSFET; Quantum effects; Short-channel effects
Câ-continuous high-temperature model for low-doped accumulation mode silicon-on-insulator pMOSFETs
Keywords: اثرات کوتاه مدت; 85.30.Tv; 85.30.De; Fully-depleted; Accumulation; SOI pMOSFET; High-temperature electronics; Short-channel effects; Câ-continuous model;