کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
753465 | 895533 | 2007 | 8 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Device performance and optimization of decananometer long double gate MOSFET by Monte Carlo simulation
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
سایر رشته های مهندسی
مهندسی برق و الکترونیک
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
Using Monte Carlo simulation, device performance of double gate MOSFET with 25Â nm-gate length is evaluated. The influences of the body thickness, of the gate overlap or underlap, of the oxide thickness, of the back gate length, and of the RC parasitic effects have been investigated. We show that well-tempered devices with excellent subthreshold behaviour and good dynamic operation may be achieved with 10Â nm-thick body if the gate-source/drain overlap is reduced to 0 and parasitic RC effects are controlled. To boost performance and to obtain greater allowance to parasitic RC effects, strained body may be used. Finally, the scaling strategy resulting from the study of 25Â nm-long devices is successfully applied to design double gate MOSFET with shorter gate lengths.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Solid-State Electronics - Volume 51, Issue 4, April 2007, Pages 543-550
Journal: Solid-State Electronics - Volume 51, Issue 4, April 2007, Pages 543-550
نویسندگان
A. Bournel, V. Aubry-Fortuna, J. Saint-Martin, P. Dollfus,