کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
10364447 | 871674 | 2011 | 6 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Cylindrical surrounding-gate MOSFETs with electrically induced source/drain extension
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی کامپیوتر
سخت افزارها و معماری
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
A novel cylindrical surrounding gate MOSFETs with electrically induced source/drain extension is proposed and demonstrated by numerical simulation for the first time. In the new device, a constant voltage is applied to the side-gate to form inversion layers acting as the extremely shallow virtual source/drain. Using three-dimensional device simulator, we have investigated the device performance focusing on the threshold voltage roll-off, the drain induced barrier lowering, the subthreshold swing, electrical field and carrier temperature. Based on our simulation results, we demonstrate that the proposed structure exhibits better suppression of short channel effects and hot carrier effects when compared to the conventional cylindrical surrounding gate MOSFETs.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Microelectronics Journal - Volume 42, Issue 2, February 2011, Pages 341-346
Journal: Microelectronics Journal - Volume 42, Issue 2, February 2011, Pages 341-346
نویسندگان
Cong Li, Yiqi Zhuang, Ru Han,